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MPTE-10G

Onsemi

MPTE-10G by Onsemi

The Onsemi MPTE-10G is a Zener diode with 10V max repetitive peak reverse voltage and 1500W non-repetitive peak power dissipation. Ideal for transient suppression in applications requiring unidirectional polarity protection. Operating temp range -65 to 175 °C makes it suitable for various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,832 parts In-Stock

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Vyrian

USA . 1,211 parts In-Stock

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Problanco Electronics

Mexico . 8,265 parts In-Stock

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SupplyDigital Components

Austria . 5,419 parts In-Stock

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Kulean Microsystems

USA . 2,549 parts In-Stock

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Corphita

USA . 1,005 parts In-Stock

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TANS Electronics

Latvia . 550 parts In-Stock

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Corohmni

South Africa . 423 parts In-Stock

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UHIMA Technologies

Türkiye . 313 parts In-Stock

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Overview

Upgrade your electrical systems with the MPTE-10G from Onsemi, a leading manufacturer of high-quality transient suppression devices. Designed for maximum performance and durability, this product offers reliable protection against voltage spikes and surges. Ideal for a wide range of applications, this single-config device is perfect for ensuring the safety and longevity of your electronics. Trust Onsemi to deliver exceptional value and peace of mind with the MPTE-10G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection against physical damage, making this product suitable for a variety of applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high maximum power dissipation rating, this device can effectively handle transient surges and protect sensitive components in a circuit.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows this device to be used in a wide range of environments without performance degradation.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Maximum Clamping Voltage: 16.7 V

The low maximum clamping voltage ensures effective transient suppression by limiting the voltage across the protected circuit.

Technical Specifications

Transient Suppression Devices MPTE-10G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

11.7 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

16.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-10G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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