Loading...

MPTE-10CRL4

Onsemi

MPTE-10CRL4 by Onsemi

MPTE-10CRL4 by Onsemi is a Zener diode with 1500W peak power dissipation, 12V breakdown voltage, and bidirectional polarity. It is used for transient suppression in applications requiring protection against voltage spikes. With a max clamping voltage of 14.5V, it operates b/w -65 °C to 175°C effectively.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,429

-

-

-

-

Digiode

USA . 682 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

682

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 8,224 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,224

-

-

-

-

SupplyDigital Components

Austria . 6,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,568

-

-

-

-

Kulean Microsystems

USA . 6,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,506

-

-

-

-

Problanco Electronics

Mexico . 2,739 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,739

-

-

-

-

Corphita

USA . 953 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

953

-

-

-

-

UHIMA Technologies

Türkiye . 847 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

847

-

-

-

-

Corohmni

South Africa . 183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

183

-

-

-

-

Overview

Protect your electronics with the MPTE-10CRL4 transient suppression device from Onsemi. With a maximum non-repetitive peak reverse power dissipation of 1500W and a nominal breakdown voltage of 12V, this zener diode offers reliable protection against voltage spikes. Perfect for applications in automotive, industrial, and consumer electronics, this product ensures that your devices are safe from power surges. Trust Onsemi's quality and expertise to keep your electronics running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the components inside, making it suitable for various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high maximum power dissipation capacity, this transient suppression device can handle sudden spikes in voltage without being damaged.

Nominal Breakdown Voltage: 12 V

The nominal breakdown voltage of 12V indicates that this device will start conducting and suppressing transient voltages when the input voltage exceeds this threshold.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C ensures that this device can perform reliably even in high-temperature environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C means that this device can also function effectively in extremely cold conditions.

Maximum Repetitive Peak Reverse Voltage: 10 V

With a maximum repetitive peak reverse voltage of 10V, this device can provide continuous protection against transient spikes while maintaining its performance.

Maximum Clamping Voltage: 14.5 V

The maximum clamping voltage of 14.5V indicates the maximum voltage level that this device will allow before clamping and suppressing the transient voltage, protecting downstream components.

Technical Specifications

Transient Suppression Devices MPTE-10CRL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

11.7 V

Nominal Breakdown Voltage:

12 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-10CRL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20