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MPTE-15C

Onsemi

MPTE-15C by Onsemi

The Onsemi MPTE-15C is a Zener diode with 1500W peak power dissipation, 18V breakdown voltage, and bidirectional polarity. It is used for transient suppression in electronic circuits to protect against voltage spikes. The device comes in an axial package with nickel gold palladium terminals.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Digiode

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Vyrian

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First Choice Components Inc.

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Kulean Microsystems

USA . 5,771 parts In-Stock

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TANS Electronics

Latvia . 1,205 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 684 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 187 parts In-Stock

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Corohmni

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Overview

Experience unparalleled protection and reliability with the Onsemi MPTE-15C Transient Suppression Device. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in all their products. The MPTE-15C is designed to safeguard your electronics from voltage spikes and surges, offering peace of mind and extended product lifespan. Whether you're in need of surge protection for industrial equipment, telecommunications systems, or automotive applications, the MPTE-15C delivers superior protection and value that you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection to the device, making it suitable for various environments and applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

This high power dissipation rating allows the device to effectively handle surges and transients, ensuring reliable performance in critical situations.

Nominal Breakdown Voltage: 18 V

The 18 V nominal breakdown voltage ensures that the device activates at the right voltage level, providing effective protection against voltage spikes and transients.

Package Shape: ROUND

The round package shape allows for easy installation and integration into various circuit designs, making it a versatile choice for transient suppression applications.

Maximum Power Dissipation: 5 W

With a maximum power dissipation of 5 W, this device can handle continuous operation under high power conditions, ensuring long-term reliability and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor diode technology ensures efficient transient suppression and protection against voltage spikes, making it an ideal choice for safeguarding sensitive electronic components.

Polarity: BIDIRECTIONAL

The bidirectional polarity of the device allows it to suppress transients in both directions, providing comprehensive protection for electronic circuits and components.

Maximum Clamping Voltage: 21.4 V

The high maximum clamping voltage ensures that the device effectively limits the voltage spikes to a safe level, preventing damage to sensitive electronics.

Technical Specifications

Transient Suppression Devices MPTE-15C attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

17.6 V

Nominal Breakdown Voltage:

18 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

21.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Position:

Trade Compliance

MPTE-15C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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