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MJF3055

Onsemi

MJF3055 by Onsemi

MJF3055 by Onsemi is a NPN BJT transistor with 30W power dissipation, 90V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals.

Median Price

$0.356

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 983 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

983

-

$0.383

$0.318

$0.283

DigiKey

USA . 983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.330

10k+ parts

-

983

-

-

$0.330

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 120 parts In-Stock

1+ parts

$0.261

100+ parts

$0.274

1k+ parts

$0.258

10k+ parts

-

120

$0.261

$0.274

$0.258

-

Digiode

USA . 2,358 parts In-Stock

1+ parts

$0.298

100+ parts

-

1k+ parts

-

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2,358

$0.298

-

-

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Vyrian

USA . 2,120 parts In-Stock

1+ parts

$0.314

100+ parts

-

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-

10k+ parts

-

2,120

$0.314

-

-

-

Component Electronics Inc.

Canada . 2,343 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

-

2,343

$0.770

$0.580

$0.500

-

American Microsemiconductor Inc.

USA . 7 parts In-Stock

1+ parts

$4.610

100+ parts

-

1k+ parts

-

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7

$4.610

-

-

-

Odi Ramu Company

Canada . 1,800 parts In-Stock

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-

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1,800

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-

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DigiKey Marketplace

USA . 983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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983

-

-

-

-

Electronic Expediters

USA . 60 parts In-Stock

1+ parts

-

100+ parts

-

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60

-

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Prism Electronics

USA . 50 parts In-Stock

1+ parts

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50

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 481 parts In-Stock

1+ parts

$0.261

100+ parts

-

1k+ parts

-

10k+ parts

-

481

$0.261

-

-

-

Corphita

USA . 2,407 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

-

10k+ parts

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2,407

$0.283

-

-

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Component Stockers USA

USA . 787 parts In-Stock

1+ parts

$0.320

100+ parts

$0.300

1k+ parts

-

10k+ parts

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787

$0.320

$0.300

-

-

Ampacity Inc.

Singapore . 862 parts In-Stock

1+ parts

$0.580

100+ parts

-

1k+ parts

-

10k+ parts

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862

$0.580

-

-

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Kepictronics

USA . 13,000 parts In-Stock

1+ parts

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13,000

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-

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Kulean Microsystems

USA . 7,809 parts In-Stock

1+ parts

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7,809

-

-

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Problanco Electronics

Mexico . 5,614 parts In-Stock

1+ parts

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5,614

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-

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TANS Electronics

Latvia . 3,982 parts In-Stock

1+ parts

-

100+ parts

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3,982

-

-

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

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SupplyDigital Components

Austria . 1,477 parts In-Stock

1+ parts

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1,477

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-

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Continental Prestige Electronics

USA . 983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.284

10k+ parts

-

983

-

-

$0.284

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UHIMA Technologies

Türkiye . 672 parts In-Stock

1+ parts

-

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672

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Perfect Parts

USA . 56 parts In-Stock

1+ parts

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100+ parts

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56

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Overview

Elevate your power management capabilities with the MJF3055 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers a maximum power dissipation of 30 W and a maximum collector current of 10 A. With its durable plastic/epoxy package body material and a peak reflow temperature of 235 °C, the MJF3055 ensures efficient performance even in high-temperature environments. Upgrade your projects with the unmatched value and benefits that this product provides, making it a must-have for professionals looking to elevate their power management solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Maximum Power Dissipation (Abs): 30 W

Can handle high power dissipation, making it suitable for applications that require a higher output.

Maximum Collector-Emitter Voltage: 90 V

With a high voltage rating, this transistor can handle higher voltages safely and efficiently.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency allows for fast switching speeds, making it ideal for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF3055 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF3055 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-341-9620, 5961013419620

NIIN

013419620

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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