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MJF32CG

Onsemi

MJF32CG by Onsemi

The Onsemi MJF32CG is a PNP BJT transistor with 3 terminals, capable of handling up to 28W power dissipation. It operates at a max temperature of 150°C and has a collector-emitter voltage of 100V. Ideal for switching applications due to its high current capacity and low transition frequency of 3MHz.

Median Price

$1.725

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 500 parts In-Stock

1+ parts

$1.690

100+ parts

$0.966

1k+ parts

$0.794

10k+ parts

-

500

$1.690

$0.966

$0.794

-

DigiKey

USA . 3,411 parts In-Stock

1+ parts

$1.760

100+ parts

$0.750

1k+ parts

$0.542

10k+ parts

$0.440

3,411

$1.760

$0.750

$0.542

$0.440

Mouser Electronics

USA . 975 parts In-Stock

1+ parts

$1.760

100+ parts

$0.750

1k+ parts

$0.541

10k+ parts

$0.440

975

$1.760

$0.750

$0.541

$0.440

Verical

USA . 5,550 parts In-Stock

1+ parts

-

100+ parts

$0.443

1k+ parts

-

10k+ parts

-

5,550

-

$0.443

-

-

Flip Electronics (Authorized)

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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400

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,169 parts In-Stock

1+ parts

$0.393

100+ parts

-

1k+ parts

-

10k+ parts

-

2,169

$0.393

-

-

-

Digiode

USA . 630 parts In-Stock

1+ parts

$1.577

100+ parts

-

1k+ parts

-

10k+ parts

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630

$1.577

-

-

-

ComSIT Distribution GmbH

Germany . 8,275 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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8,275

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-

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Flip Electronics

USA . 5,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,950

-

-

-

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Zilex Electronics Inc.

Canada . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,400

-

-

-

-

IBS Electronics

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$0.566

1k+ parts

$0.539

10k+ parts

$0.513

200

-

$0.566

$0.539

$0.513

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 309 parts In-Stock

1+ parts

$0.393

100+ parts

-

1k+ parts

-

10k+ parts

-

309

$0.393

-

-

-

Component Stockers USA

USA . 700 parts In-Stock

1+ parts

$0.580

100+ parts

$0.450

1k+ parts

-

10k+ parts

-

700

$0.580

$0.450

-

-

Corphita

USA . 996 parts In-Stock

1+ parts

$1.494

100+ parts

-

1k+ parts

-

10k+ parts

-

996

$1.494

-

-

-

Microchip USA

USA . 9,274 parts In-Stock

1+ parts

$7.865

100+ parts

-

1k+ parts

-

10k+ parts

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9,274

$7.865

-

-

-

Perfect Parts

USA . 113,288 parts In-Stock

1+ parts

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100+ parts

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113,288

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GreenTree Electronics

Israel . 12,500 parts In-Stock

1+ parts

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100+ parts

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12,500

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-

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Problanco Electronics

Mexico . 8,241 parts In-Stock

1+ parts

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100+ parts

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8,241

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-

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Kulean Microsystems

USA . 6,778 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,778

-

-

-

-

TANS Electronics

Latvia . 1,917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,917

-

-

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SupplyDigital Components

Austria . 1,085 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,085

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UHIMA Technologies

Türkiye . 876 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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876

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Overview

Experience the power and efficiency of the MJF32CG Power Bipolar Junction Transistor by Onsemi. With a reputation for quality and innovation, Onsemi delivers reliable products that meet the demands of various applications. The MJF32CG, with its PNP polarity and switching capabilities, offers customers value and benefits like high power dissipation, low DC current gain, and a wide operating temperature range. Whether used in industrial machinery or electronic devices, this transistor provides the performance and reliability that customers can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term performance and reliability.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs, making it versatile for a variety of applications.

Configuration: SINGLE

Simplified design with a single transistor configuration for straightforward installation and use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power control and performance.

Package Shape: RECTANGULAR

Space-saving rectangular shape allows for efficient PCB layout and compact design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections for easy soldering and reliable electrical contact.

No. of Terminals: 3

Simple three-terminal design for easy integration and connection in circuits.

Maximum Power Dissipation (Abs): 28 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting in various applications.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of up to 150°C for reliable performance in various environments.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating of 100V for handling higher voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in semiconductor applications.

Maximum Collector Current (IC): 3 A

High collector current rating of 3A for powering demanding electronic circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and secure electrical connections.

Terminal Position: SINGLE

Single terminal position for easy installation and connection in circuits.

Case Connection: ISOLATED

Isolated case connection for enhanced safety and protection in electronic circuits.

Reference Standard: UL RECOGNIZED

UL recognized standard ensures compliance with industry safety and performance standards.

Nominal Transition Frequency (fT): 3 MHz

Nominal transition frequency of 3MHz for reliable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF32CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF32CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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