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MJF31C

Onsemi

MJF31C by Onsemi

The Onsemi MJF31C is a NPN BJT transistor with 3 terminals, capable of handling up to 28W power dissipation. Ideal for switching applications, it has a max collector-emitter voltage of 100V and max collector current of 3A. With a min DC current gain of 10 and operating temp up to 150 °C, it's UL recognized for reliability in various electronic circuits.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 11 parts In-Stock

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$0.317

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$0.263

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$0.235

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$0.317

$0.263

$0.235

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Digiode

USA . 825 parts In-Stock

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$0.247

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Vyrian

USA . 5,720 parts In-Stock

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PC Components Company LLC

USA . 1,350 parts In-Stock

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Bristol Electronics

USA . 1,350 parts In-Stock

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R&J Components

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LIBRA Elektronik GmbH

Germany . 25 parts In-Stock

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Q Components

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Corphita

USA . 1,148 parts In-Stock

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$0.234

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Corohmni

South Africa . 190 parts In-Stock

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$0.260

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Problanco Electronics

Mexico . 6,576 parts In-Stock

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SupplyDigital Components

Austria . 5,913 parts In-Stock

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TANS Electronics

Latvia . 5,454 parts In-Stock

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Kulean Microsystems

USA . 5,047 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 545 parts In-Stock

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Overview

Unlock the power of innovation with the MJF31C by Onsemi. As a leading manufacturer in the industry of Power Bipolar Junction Transistors, Onsemi delivers top-quality products that are designed for maximum performance and reliability. Ideal for switching applications, this NPN transistor offers a single configuration and a maximum operating temperature of 150 °C. With a maximum collector-emitter voltage of 100V and a maximum collector current of 3A, the MJF31C provides unparalleled value and benefits to customers seeking high-quality components for their electronic projects. Choose Onsemi and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is lightweight and durable, making the transistor easy to handle and resistant to damage during installation.

Polarity or Channel Type: NPN

NPN transistors are widely used in electronic circuits for switching and amplification, providing versatility in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation when used in switching circuits.

Maximum Power Dissipation (Abs): 28 W

High power dissipation capability allows the transistor to handle significant power loads without overheating, making it ideal for power applications.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum voltage rating, this transistor can be used in circuits with higher voltage requirements, providing protection against voltage spikes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF31C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF31C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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