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MJF32C

Onsemi

MJF32C by Onsemi

The Onsemi MJF32C is a PNP Power BJT with 3 terminals and max power dissipation of 28W. Ideal for switching applications, it has a max collector-emitter voltage of 100V and max collector current of 3A. With a min hFE of 10, it operates up to 150 °C and has a transition frequency of 3MHz.

Median Price

$0.251

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 233 parts In-Stock

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-

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$0.251

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$0.208

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$0.186

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$0.251

$0.208

$0.186

Distributors (In-Stock)

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Digiode

USA . 1,693 parts In-Stock

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$0.196

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$0.196

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Vyrian

USA . 7,008 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 1,200 parts In-Stock

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PAR Electronics

UK . 33 parts In-Stock

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Component Electronics Inc.

Canada . 20 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,113 parts In-Stock

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$0.185

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Corohmni

South Africa . 102 parts In-Stock

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$0.206

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Problanco Electronics

Mexico . 8,195 parts In-Stock

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SupplyDigital Components

Austria . 8,129 parts In-Stock

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TANS Electronics

Latvia . 6,066 parts In-Stock

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Kulean Microsystems

USA . 4,276 parts In-Stock

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UHIMA Technologies

Türkiye . 170 parts In-Stock

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Overview

Elevate your electronic projects to new heights with the MJF32C by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors designed for switching applications. The MJF32C offers a reliable and efficient solution with a maximum power dissipation of 28W and a maximum collector-emitter voltage of 100V. Whether you're a hobbyist or a seasoned professional, this PNP transistor provides the performance and durability you need. Upgrade your devices today with the MJF32C and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimized performance in such scenarios.

Maximum Power Dissipation (Abs): 28 W

Capable of handling high power dissipation, making it suitable for applications with demanding power requirements.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 100 V

Can withstand high voltage levels, making it suitable for a variety of voltage requirements.

Maximum Collector Current (IC): 3 A

Capable of handling high current levels, offering reliability in high current applications.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency ensures fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF32C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF32C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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