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MJF31CG

Onsemi

MJF31CG by Onsemi

The Onsemi MJF31CG is a NPN Power BJT with 100V VCEO, 3A IC, and 28W Ptot. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. The transistor comes in a flange mount package with UL recognition.

Median Price

$1.439

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 31 parts In-Stock

1+ parts

$0.379

100+ parts

$0.345

1k+ parts

$0.311

10k+ parts

-

31

$0.379

$0.345

$0.311

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Chip1Stop

Japan . 670 parts In-Stock

1+ parts

$1.439

100+ parts

$0.696

1k+ parts

$0.566

10k+ parts

-

670

$1.439

$0.696

$0.566

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Farnell

UK . 815 parts In-Stock

1+ parts

$1.590

100+ parts

$0.695

1k+ parts

$0.436

10k+ parts

$0.412

815

$1.590

$0.695

$0.436

$0.412

Mouser Electronics

USA . 368 parts In-Stock

1+ parts

$1.850

100+ parts

$0.807

1k+ parts

$0.506

10k+ parts

$0.470

368

$1.850

$0.807

$0.506

$0.470

Newark

USA . 114 parts In-Stock

1+ parts

$1.910

100+ parts

$0.814

1k+ parts

$0.589

10k+ parts

$0.484

114

$1.910

$0.814

$0.589

$0.484

Element14

Singapore . 815 parts In-Stock

1+ parts

$2.690

100+ parts

$1.180

1k+ parts

$0.728

10k+ parts

$0.693

815

$2.690

$1.180

$0.728

$0.693

Avnet

USA . 2,500 parts In-Stock

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-

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2,500

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Flip Electronics (Authorized)

USA . 1,300 parts In-Stock

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1,300

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Arrow

USA . 170 parts In-Stock

1+ parts

-

100+ parts

$0.783

1k+ parts

$0.501

10k+ parts

$0.478

170

-

$0.783

$0.501

$0.478

Verical

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$0.783

1k+ parts

$0.501

10k+ parts

$0.478

150

-

$0.783

$0.501

$0.478

Rochester

USA . 56 parts In-Stock

1+ parts

-

100+ parts

$0.639

1k+ parts

$0.530

10k+ parts

$0.473

56

-

$0.639

$0.530

$0.473

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 373 parts In-Stock

1+ parts

$0.360

100+ parts

-

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-

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373

$0.360

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Vyrian

USA . 2,117 parts In-Stock

1+ parts

$0.379

100+ parts

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2,117

$0.379

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NAC Semi

USA . 6,200 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.230

10k+ parts

$1.110

6,200

-

-

$1.230

$1.110

Flip Electronics

USA . 1,300 parts In-Stock

1+ parts

-

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1,300

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Cyclops Electronics Ltd

UK . 928 parts In-Stock

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928

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LittleDiode

UK . 2 parts In-Stock

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2

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Distributors (Availability)

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Corphita

USA . 461 parts In-Stock

1+ parts

$0.341

100+ parts

-

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-

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461

$0.341

-

-

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Corohmni

South Africa . 246 parts In-Stock

1+ parts

$0.379

100+ parts

-

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246

$0.379

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Advanced Electronics

New Zealand . 31 parts In-Stock

1+ parts

$0.379

100+ parts

$0.345

1k+ parts

$0.311

10k+ parts

-

31

$0.379

$0.345

$0.311

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Continental Prestige Electronics

USA . 1,325 parts In-Stock

1+ parts

$0.818

100+ parts

$0.631

1k+ parts

$0.445

10k+ parts

-

1,325

$0.818

$0.631

$0.445

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Component Stockers USA

USA . 3,207 parts In-Stock

1+ parts

$1.210

100+ parts

$0.770

1k+ parts

$0.560

10k+ parts

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3,207

$1.210

$0.770

$0.560

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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GreenTree Electronics

Israel . 6,050 parts In-Stock

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Problanco Electronics

Mexico . 4,776 parts In-Stock

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Perfect Parts

USA . 3,976 parts In-Stock

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3,976

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SupplyDigital Components

Austria . 2,917 parts In-Stock

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2,917

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TANS Electronics

Latvia . 2,227 parts In-Stock

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2,227

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Kulean Microsystems

USA . 1,814 parts In-Stock

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1,814

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Eastek

USA . 1,250 parts In-Stock

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Kepictronics

USA . 1,100 parts In-Stock

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UHIMA Technologies

Türkiye . 91 parts In-Stock

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91

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Overview

Unleash the power of innovation with the MJF31CG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors designed for a wide range of switching applications. With a maximum power dissipation of 28W and a maximum collector-emitter voltage of 100V, this NPN transistor offers unmatched performance and reliability. Whether you're looking to upgrade your electronics or enhance your projects, the MJF31CG is the perfect choice to take your creations to the next level. Experience the benefits of superior technology and unleash endless possibilities with Onsemi's MJF31CG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for various electronic circuits.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easier to integrate into circuit layouts.

Transistor Application: SWITCHING

Designed for switching applications, providing high efficiency and fast switching speeds.

Maximum Power Dissipation (Abs): 28 W

Capable of handling high power dissipation, suitable for applications that require power amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, ensuring stable operation in various environments.

Maximum Collector-Emitter Voltage: 100 V

With a high collector-emitter voltage rating, this transistor can be used in a wide range of voltage applications.

Maximum Collector Current (IC): 3 A

Capable of handling high collector currents, suitable for applications that require power switching.

Nominal Transition Frequency (fT): 3 MHz

Provides high-frequency performance, making it suitable for applications where fast switching speeds are required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJF31CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJF31CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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