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MICROFJ-SMA-30035-GEVB-PK

Onsemi

MICROFJ-SMA-30035-GEVB-PK by Onsemi

MICROFJ-SMA-30035-GEVB-PK by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 3000nA. Ideal for applications requiring high sensitivity in optoelectronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,705 parts In-Stock

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Digiode

USA . 944 parts In-Stock

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944

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Problanco Electronics

Mexico . 8,119 parts In-Stock

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SupplyDigital Components

Austria . 7,313 parts In-Stock

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TANS Electronics

Latvia . 3,374 parts In-Stock

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Kulean Microsystems

USA . 700 parts In-Stock

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700

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Corohmni

South Africa . 397 parts In-Stock

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Corphita

USA . 394 parts In-Stock

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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Overview

Discover the endless possibilities with the MICROFJ-SMA-30035-GEVB-PK by Onsemi, a top-of-the-line photodiode that guarantees unparalleled quality and performance. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology and reliability in every product. The applications of this category are vast, from industrial automation to medical equipment. Experience the value and benefits this product offers, from its precise configuration to its high peak wavelength, providing customers with exceptional results and advantages that set them apart from the competition.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and versatility, making this product suitable for a wide range of applications.

Size: 3.07 mm

Compact size makes it easy to integrate into various systems without taking up too much space.

Peak Wavelength (nm): 420

The peak wavelength of 420nm indicates high sensitivity to specific light wavelengths, making it ideal for applications requiring precise detection.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer higher sensitivity and lower noise compared to traditional photodiodes, making this product a reliable choice for demanding applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product can withstand high temperatures, making it suitable for use in challenging environments.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage ensures stable performance and protection against voltage spikes, enhancing the reliability of this product.

Shape: SQUARE

The square shape allows for easy mounting and alignment, simplifying the integration process in various systems.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product is designed to function reliably even in extreme cold environments.

Maximum Dark Current: 3000 nA

The low maximum dark current of 3000nA ensures minimal noise and improved signal-to-noise ratio, making this product suitable for high-precision applications.

Technical Specifications

Photodiodes MICROFJ-SMA-30035-GEVB-PK attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

3000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.07 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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