Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MICROFJ-SMA-30020-GEVB-PK by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
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The complex configuration allows for more advanced functionality and improved performance in a variety of applications.
The compact size makes this photodiode suitable for integration into smaller devices or tight spaces.
The peak wavelength of 420 nm makes this photodiode ideal for applications requiring sensitivity to specific wavelengths of light.
The avalanche photodiode type offers high sensitivity and fast response times, making it suitable for applications requiring precise light detection.
With a high maximum operating temperature of 85 °C, this photodiode can withstand elevated temperatures without compromising performance.
The high minimum reverse breakdown voltage provides protection against reverse biases and ensures reliable operation of the photodiode.
The square shape of the photodiode simplifies integration and alignment in systems where space is limited.
The low minimum operating temperature of -40 °C allows for reliable performance in harsh environmental conditions or cold temperatures.
The low maximum dark current of 720 nA ensures minimal noise and high signal-to-noise ratio in light detection applications.
Photodiodes MICROFJ-SMA-30020-GEVB-PK attributes and parameters. Explore more Photodiodes devices from Onsemi
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Minimum Reverse Breakdown Voltage:
Shape:
Size:
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
4554
Jw Miller Magnetics
Other Semiconductors;
FDN306P
Onsemi
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
ULN2003ADR
Texas Instruments
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M24308/2-1F
Itt Cannon
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
LM555CN
Intersil
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SBAV99LT1G
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138-7-F
Diodes Incorporated
Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM107H/883
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
MBR130T1G
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
Leshan Radio
MICROFC-10010-SMT-TR
MICROFC-10010-SMT-TR by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for surface mount applications in optoelectronics due to its silicon semiconductor material and rectangular shape.
BPX61
Siemens
PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 32 V; JESD-609 Code: e0; Configuration: SINGLE;
HR1104TG
Renesas Electronics
PIN PHOTODIODE; Configuration: SINGLE; Maximum Dark Current: 30 nA; Peak Wavelength (nm): 1000; No. of Functions: 1; Size: 2 mm;
SRD00231Z
Infineon Technologies
PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Reverse Voltage: 20 V; Minimum Reverse Breakdown Voltage: 20 V;
TOPD310
Toshiba
PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 10 nA; Maximum Reverse Voltage: 30 V;
SFH2030
PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 10 nA; Nominal Light Current: .05 mA; No. of Functions: 1;
BP104F
Osram Opto Semiconductors
PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); Maximum Operating Temperature: 100 Cel; Minimum Reverse Breakdown Voltage: 20 V; Peak Wavelength (nm): 950;
MICROFJ-60035-TSV
AVALANCHE PHOTODIODE;
BPW34
Temic Semiconductors
PIN PHOTODIODE; No. of Functions: 1; Minimum Reverse Breakdown Voltage: 60 V; Shape: SQUARE; Size: 3 mm; Maximum Dark Current: 30 nA;
BPV22NF
Telefunken Microelectronics
PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 30 nA; Maximum Operating Temperature: 100 Cel; Maximum Reverse Voltage: 60 V; Semiconductor Material: GaAs;
SPS503C3
The Onsemi SPS503C3 is a PIN photodiode with max operating temp of 70 °C and min of -20°C. It has a max dark current of 20nA, response time of 0.00000002s, and reverse voltage of 30V. Ideal for optoelectronic applications requiring precise light detection in various environments.
NDL5100P
AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000008 s; Maximum Dark Current: 500 nA; Minimum Operating Temperature: -40 Cel;
SFH203
Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 7 nA; Semiconductor Material: Silicon; JESD-609 Code: e0;
Vishay Intertechnology
BPW34 by Vishay Intertechnology is a 3mm square PIN photodiode with a peak wavelength of 900nm. It has a max operating temperature of 100°C and a min reverse breakdown voltage of 60V. This photodiode is commonly used in applications requiring infrared detection and can be mounted through hole.
QSB34CGR
The Onsemi QSB34CGR is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max reverse voltage of 32V and dark current of 30nA. Ideal for infrared applications, it features a rectangular shape measuring 4.4mm and surface mounting feature.
SFH263F
Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Dark Current: .02 nA; Maximum Operating Temperature: 80 Cel;
NDL5151P2C
AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 40 V; Semiconductor Material: Germanium; Maximum Dark Current: 300 nA; Maximum Operating Temperature: 85 Cel;
NR8500FR-CB
Photo Diodes;
VTB1013BH
Perkinelmer
VBPW34FAS
PIN PHOTODIODE; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MICROFC-60035-SMT-TR1
AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Configuration: COMPLEX; Shape: SQUARE; Size: 6 mm; Minimum Reverse Breakdown Voltage: 24.2 V;
MICROFJ-60035-TSV-TR1
MICROFJ-60035-TSV-TR1 by Onsemi is a 6.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in detecting light signals.
MICROFC-60035-SMT-TR
AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Additional Features: LOW NOISE; Peak Wavelength (nm): 420; Minimum Operating Temperature: -40 Cel; Size: 6 mm;
MICROFC-SMA-60035-GEVB
MICROFJ-SMA-60035-GEVB
MICROFC-30035-SMT-TR1
MICROFC-30035-SMT-TR1 by Onsemi is a 3 mm square avalanche photodiode with a peak wavelength of 420 nm. It has a max operating temperature of 85°C and a min reverse breakdown voltage of 24.2 V. This photodiode is suitable for applications requiring high sensitivity in low light conditions, such as optical communication systems or medical imaging devices.
MICROFJ-30035-TSV-TR1
AVALANCHE PHOTODIODE; Size: 3.07 mm; Configuration: COMPLEX; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: NO; Peak Wavelength (nm): 420;
MICROFC-30035-SMT-TR
AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 443 nA; Configuration: COMPLEX; Additional Features: LOW NOISE; Maximum Operating Temperature: 85 Cel;
MICROFJ-30035-TSV-TR
AVALANCHE PHOTODIODE; Configuration: COMPLEX; Size: 3.07 mm; Peak Wavelength (nm): 420; Maximum Dark Current: 3000 nA; Infrared (IR) Range: NO;
MICRORB-SMA-10020-GEVB
MICROFJ-40035-TSV-TR1
AVALANCHE PHOTODIODE; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Minimum Operating Temperature: -40 Cel; Minimum Reverse Breakdown Voltage: 24.2 V; Size: 3.93 mm;
MICROFC-10010-SMT-TR1
AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Reverse Breakdown Voltage: 24.2 V; Minimum Operating Temperature: -40 Cel; Packing Method: TR; Additional Features: LOW NOISE;
MICROFC-SMA-30050-GEVB
MICROFJ-SMTPA-60035-GEVB
MICROFC-SMA-30035-GEVB
MICROFC-SMTPA-30035-GEVB
MICROFJ-30020-TSV-TR
AVALANCHE PHOTODIODE; Maximum Dark Current: 720 nA; Shape: SQUARE; Peak Wavelength (nm): 420; Minimum Reverse Breakdown Voltage: 24.2 V; Configuration: COMPLEX;
MICROFJ-30020-TSV-TR1
AVALANCHE PHOTODIODE; Shape: SQUARE; Infrared (IR) Range: NO; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 420; No. of Functions: 1;
MICROFJ-SMA-30035-GEVB
MICROFJ-SMTPA-30035-GEVB
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