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MICROFJ-SMA-30020-GEVB-PK

Onsemi

MICROFJ-SMA-30020-GEVB-PK by Onsemi

MICROFJ-SMA-30020-GEVB-PK by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,659 parts In-Stock

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SupplyDigital Components

Austria . 8,162 parts In-Stock

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Kulean Microsystems

USA . 6,906 parts In-Stock

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TANS Electronics

Latvia . 6,492 parts In-Stock

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Corphita

USA . 1,822 parts In-Stock

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Problanco Electronics

Mexico . 999 parts In-Stock

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UHIMA Technologies

Türkiye . 571 parts In-Stock

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Corohmni

South Africa . 291 parts In-Stock

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Overview

Unlock the potential of your optoelectronic projects with the MICROFJ-SMA-30020-GEVB-PK by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality photodiodes that are perfect for a wide range of applications. From scientific research to industrial automation, this avalanche photodiode offers exceptional performance and reliability. With a compact size and impressive specifications, this product provides unmatched value and benefits to customers looking for precision and efficiency in their projects. Trust Onsemi for all your optoelectronic needs and experience the difference in quality today!

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for more advanced functionality and improved performance in a variety of applications.

Size: 3.07 mm

The compact size makes this photodiode suitable for integration into smaller devices or tight spaces.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm makes this photodiode ideal for applications requiring sensitivity to specific wavelengths of light.

Optoelectronic Type: AVALANCHE PHOTODIODE

The avalanche photodiode type offers high sensitivity and fast response times, making it suitable for applications requiring precise light detection.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this photodiode can withstand elevated temperatures without compromising performance.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage provides protection against reverse biases and ensures reliable operation of the photodiode.

Shape: SQUARE

The square shape of the photodiode simplifies integration and alignment in systems where space is limited.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows for reliable performance in harsh environmental conditions or cold temperatures.

Maximum Dark Current: 720 nA

The low maximum dark current of 720 nA ensures minimal noise and high signal-to-noise ratio in light detection applications.

Technical Specifications

Photodiodes MICROFJ-SMA-30020-GEVB-PK attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

720 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.07 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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