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MICROFC-30020-SMT

Onsemi

MICROFC-30020-SMT by Onsemi

MICROFC-30020-SMT by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 142nA. Ideal for optoelectronic applications requiring surface mount configuration in silicon semiconductor material.

Median Price

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Lifecycle Status

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Digiode

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SupplyDigital Components

Austria . 8,214 parts In-Stock

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Kulean Microsystems

USA . 5,023 parts In-Stock

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Problanco Electronics

Mexico . 1,065 parts In-Stock

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TANS Electronics

Latvia . 403 parts In-Stock

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Corohmni

South Africa . 385 parts In-Stock

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UHIMA Technologies

Türkiye . 268 parts In-Stock

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Corphita

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Overview

Experience superior quality and performance with the MICROFC-30020-SMT photodiode from Onsemi. This complex configuration, square-shaped avalanche photodiode offers a peak wavelength of 420nm, making it ideal for a wide range of optoelectronic applications. With a minimum reverse breakdown voltage of 24.2V and maximum dark current of 142nA, this silicon-based photodiode delivers exceptional reliability and precision in even the most demanding environments. Trust Onsemi's expertise in semiconductor manufacturing to provide you with a cutting-edge solution that exceeds your expectations. Elevate your projects with the MICROFC-30020-SMT and unlock a world of possibilities.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration of this photodiode allows for enhanced performance and sensitivity, making it suitable for applications requiring high precision and accuracy.

Size: 3 mm

The compact size of this photodiode makes it easy to integrate into various devices and systems without taking up much space, making it versatile for different applications.

Peak Wavelength (nm): 420

The peak wavelength of 420nm makes this photodiode ideal for applications that require sensitivity to this specific range of light, ensuring accurate detection and measurement.

Optoelectronic Type: AVALANCHE PHOTODIODE

The avalanche photodiode design provides high sensitivity and low noise performance, making it suitable for applications requiring detection of weak optical signals with high reliability.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows this photodiode to be used in a wide range of environmental conditions without sacrificing performance or reliability.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage of 24.2V ensures that this photodiode can handle high voltage conditions without damage, adding to its durability and longevity.

Shape: SQUARE

The square shape of this photodiode makes it easy to align and mount in systems, simplifying the installation process and ensuring consistent performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows this photodiode to be used in extreme cold environments without compromising its functionality, making it versatile for different applications.

Maximum Dark Current: 142 nA

The low maximum dark current of 142nA ensures that this photodiode provides accurate readings even in low-light conditions, making it suitable for applications requiring precise light detection.

Semiconductor Material: Silicon

The silicon semiconductor material used in this photodiode offers high sensitivity and speed, making it an excellent choice for applications requiring fast and reliable light detection.

Mounting Feature: SURFACE MOUNT

The surface mounting feature of this photodiode allows for easy and secure installation on circuit boards or other surfaces, enhancing its usability in various electronic devices and systems.

Technical Specifications

Photodiodes MICROFC-30020-SMT attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

142 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

SQUARE

Size:

3 mm

Trade Compliance

MICROFC-30020-SMT Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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