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MCR704AT4-1

Onsemi

MCR704AT4-1 by Onsemi

MCR704AT4-1 by Onsemi is a single SCR with max DC gate trigger current of 0.075mA and non-repetitive peak on-state current of 35A. It has a max RMS on-state current of 4A, making it suitable for applications requiring high power control in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,356 parts In-Stock

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Vyrian

USA . 1,136 parts In-Stock

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Kulean Microsystems

USA . 2,483 parts In-Stock

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2,483

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TANS Electronics

Latvia . 1,971 parts In-Stock

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Problanco Electronics

Mexico . 1,707 parts In-Stock

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SupplyDigital Components

Austria . 1,614 parts In-Stock

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Corphita

USA . 1,156 parts In-Stock

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UHIMA Technologies

Türkiye . 288 parts In-Stock

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Corohmni

South Africa . 66 parts In-Stock

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Overview

Elevate your electronic projects with the MCR704AT4-1 from Onsemi, a top-tier manufacturer known for quality and reliability. This Silicon Controlled Rectifier (SCR) offers seamless performance in a range of applications, from power supplies to motor control. With a maximum on-state current of 2.6 A and a non-repetitive peak on-state current of 35 A, this SCR delivers superior efficiency and durability. Trust Onsemi to provide cutting-edge technology that exceeds expectations, providing you with unmatched value and peace of mind for all your electrical needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the SCR, ensuring durability and reliability.

Maximum DC Gate Trigger Current: 0.075 mA

Low gate trigger current allows for precise and efficient control of the SCR.

Configuration: SINGLE

Single configuration simplifies installation and operation of the SCR.

Non Repetitive Peak On-state Current: 35 A

High on-state current capacity makes this SCR suitable for handling heavy loads.

Maximum On-state Current: 2.6 A

The maximum on-state current rating ensures safe and reliable operation of the SCR under normal operating conditions.

Maximum Leakage Current: 0.2 mA

Low leakage current minimizes power loss and prevents overheating of the SCR.

Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating allows the SCR to withstand reverse voltage without breakdown.

Maximum Operating Temperature: 110 °C

Wide operating temperature range enables the SCR to perform efficiently in various environments.

Trigger Device Type: SCR

An SCR is a reliable and robust semiconductor device for switching and controlling power in electrical circuits.

Maximum RMS On-state Current: 4 A

High RMS on-state current rating allows the SCR to handle AC currents effectively.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR704AT4-1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.075 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

10 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

35 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR704AT4-1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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