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MCR703A1

Onsemi

MCR703A1 by Onsemi

MCR703A1 by Onsemi is a Silicon Controlled Rectifier with max on-state voltage of 2.2V, max DC gate trigger current of 0.3mA, and max on-state current of 2.6A. It operates b/w -40 to 110 °C and is ideal for applications requiring SCR trigger devices with low leakage current and high holding current capabilities.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Digiode

USA . 2,297 parts In-Stock

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Vyrian

USA . 901 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 80 parts In-Stock

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North Shore Components

USA . 25 parts In-Stock

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Kulean Microsystems

USA . 7,911 parts In-Stock

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SupplyDigital Components

Austria . 6,504 parts In-Stock

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Problanco Electronics

Mexico . 3,402 parts In-Stock

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Corphita

USA . 1,856 parts In-Stock

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TANS Electronics

Latvia . 196 parts In-Stock

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Corohmni

South Africa . 134 parts In-Stock

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UHIMA Technologies

Türkiye . 128 parts In-Stock

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Overview

Unleash the power of the MCR703A1 by Onsemi, a high-quality Silicon Controlled Rectifier that offers unmatched reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this SCR is designed to meet the demands of various applications with ease. Whether you're in need of a reliable voltage control solution or looking to enhance your electronic devices, the MCR703A1 delivers exceptional value and benefits. Say goodbye to downtime and hello to seamless operations with the MCR703A1 by Onsemi.

Feature Benefit Bullets

Maximum On-state Voltage: 2.2 V

Low on-state voltage helps in reducing power loss and improving efficiency of the device.

Maximum DC Gate Trigger Current: 0.3 mA

Low gate trigger current allows for precise control of the device, making it suitable for various applications.

Non Repetitive Peak On-state Current: 0.035 A

Ability to handle peak currents ensures reliable performance in high-stress conditions.

Maximum On-state Current: 2.6 A

High maximum on-state current capability makes this SCR suitable for applications requiring high current handling.

Maximum Leakage Current: 0.2 mA

Low leakage current contributes to the efficiency and reliability of the device during off-state operation.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows the SCR to be used in various environments without performance degradation.

Trigger Device Type: SCR

SCRs are known for their reliability and ruggedness, making them a preferred choice for high-power applications.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures the SCR can operate in extreme cold conditions without any issues.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and ensures a secure electrical connection.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures efficient triggering of the SCR, enhancing its performance.

Repetitive Peak Off-state Voltage: 100 V

High off-state voltage rating makes this SCR suitable for applications requiring high voltage switching.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Ability to handle rapid changes in off-state voltage ensures reliable performance during switching operations.

Maximum Holding Current: 10 mA

High holding current ensures the SCR stays in an on-state even under varying conditions, enhancing device reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR703A1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.3 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

10 mA

JESD-609 Code:

e0

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

.035 A

Maximum On-state Voltage:

2.2 V

Maximum On-state Current:

2.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

SCR

Trade Compliance

MCR703A1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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