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MCR704A1

Onsemi

MCR704A1 by Onsemi

MCR704A1 by Onsemi is a Silicon Controlled Rectifier with max on-state voltage of 2.2V, DC gate trigger current of 0.3mA, and max on-state current of 2.6A. It operates b/w -40 to 110 °C and is ideal for applications requiring precise control over electrical currents.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,743 parts In-Stock

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Vyrian

USA . 494 parts In-Stock

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Problanco Electronics

Mexico . 5,957 parts In-Stock

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Kulean Microsystems

USA . 5,587 parts In-Stock

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SupplyDigital Components

Austria . 5,041 parts In-Stock

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Corphita

USA . 444 parts In-Stock

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TANS Electronics

Latvia . 420 parts In-Stock

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UHIMA Technologies

Türkiye . 199 parts In-Stock

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Corohmni

South Africa . 162 parts In-Stock

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Overview

Unleash the power of advanced technology with the MCR704A1 by Onsemi. Crafted with precision and quality, this Silicon Controlled Rectifier (SCR) offers unparalleled performance and reliability. Whether you're in need of a dependable solution for industrial machinery, power control systems, or electronic devices, the MCR704A1 delivers impressive results every time. With a commitment to excellence and innovation, Onsemi ensures that customers receive outstanding value and benefits with this cutting-edge product. Experience the difference with the MCR704A1 - your trusted partner for all your power control needs.

Feature Benefit Bullets

Maximum On-state Voltage: 2.2 V

Low on-state voltage helps in reducing power loss and improving efficiency of the SCR.

Maximum DC Gate Trigger Current: 0.3 mA

Low gate trigger current ensures reliable and consistent switching of the SCR.

Non Repetitive Peak On-state Current: 0.035 A

Ability to handle high peak currents on a non-repetitive basis makes the SCR suitable for high-demand applications.

Maximum On-state Current: 2.6 A

High on-state current rating allows the SCR to handle heavy loads efficiently.

Maximum Leakage Current: 0.2 mA

Low leakage current ensures that the SCR does not conduct unnecessarily when it should be off, leading to energy savings.

Maximum Operating Temperature: 110 °C

Wide operating temperature range enables the SCR to function reliably in various environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, the device offers precise control over switching operations for optimal performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good solderability and ensures a secure connection in the circuit.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures efficient triggering of the SCR while consuming minimal power.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating allows the SCR to block voltages effectively when it is not conducting.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Ability to withstand rapid changes in off-state voltage makes the SCR suitable for dynamic applications.

Maximum Holding Current: 10 mA

High holding current ensures that the SCR remains latched in the on-state position even in the presence of external disturbances.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR704A1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.3 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

10 mA

JESD-609 Code:

e0

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

.035 A

Maximum On-state Voltage:

2.2 V

Maximum On-state Current:

2.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

SCR

Trade Compliance

MCR704A1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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