Loading...

MCR706A1

Onsemi

MCR706A1 by Onsemi

MCR706A1 by Onsemi is a Silicon Controlled Rectifier with max on-state voltage of 2.2V, DC gate trigger current of 0.3mA, and non-repetitive peak on-state current of 25A. It operates b/w -40 to 110 °C, making it suitable for various applications requiring SCR technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,386

-

-

-

-

Digiode

USA . 2,203 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,203

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 4,272 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,272

-

-

-

-

Problanco Electronics

Mexico . 3,302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,302

-

-

-

-

TANS Electronics

Latvia . 2,263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,263

-

-

-

-

Corphita

USA . 924 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

924

-

-

-

-

SupplyDigital Components

Austria . 481 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

481

-

-

-

-

Corohmni

South Africa . 391 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

391

-

-

-

-

UHIMA Technologies

Türkiye . 356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

356

-

-

-

-

Overview

Unleash the power of the MCR706A1 by Onsemi, a top-of-the-line Silicon Controlled Rectifier that guarantees unparalleled quality and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this SCR offers exceptional performance and efficiency. Ideal for a wide range of applications, this product provides customers with unmatched value and benefits. Say goodbye to subpar products and experience the advantage of using the MCR706A1 in your projects today!

Feature Benefit Bullets

Maximum On-state Voltage: 2.2 V

Low on-state voltage ensures efficient operation and minimal power loss, making this product energy-efficient.

Maximum DC Gate Trigger Current: 0.3 mA

Low gate trigger current allows for precise control over switching, enhancing the reliability and accuracy of the product.

Non Repetitive Peak On-state Current: 25 A

High peak on-state current capability allows the product to handle sudden surges in current without damage, improving its durability.

Maximum On-state Current: 2.6 A

A high on-state current rating ensures that the product can handle heavy loads with ease, making it versatile in various applications.

Maximum Leakage Current: 0.2 mA

Low leakage current minimizes power wastage and ensures that the product operates efficiently even during standby periods.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows the product to function reliably in diverse environmental conditions, increasing its overall utility.

Minimum Operating Temperature: -40 °C

Extended operating temperature range enables the product to function in extreme cold conditions, making it suitable for a wide range of applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and conductivity, ensuring easy installation and reliable electrical connections.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage allows for efficient and quick switching, enhancing the overall performance of the product.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating provides ample protection against voltage spikes, making the product durable and reliable in harsh conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The fast rate of rise of off-state voltage ensures quick response times, enhancing the safety and reliability of the product.

Maximum Holding Current: 10 mA

A high holding current ensures that the product remains in the on-state even under varying load conditions, improving its stability and performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR706A1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.3 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

10 mA

JESD-609 Code:

e0

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Voltage:

2.2 V

Maximum On-state Current:

2.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trigger Device Type:

SCR

Trade Compliance

MCR706A1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20