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MCR703AT4-1

Onsemi

MCR703AT4-1 by Onsemi

MCR703AT4-1 by Onsemi is a single SCR with max DC gate trigger current of 0.075 mA and non-repetitive peak on-state current of 35 A. It has a max RMS on-state current of 4 A, making it suitable for applications requiring high power control in industrial settings.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,452 parts In-Stock

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Digiode

USA . 555 parts In-Stock

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555

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TANS Electronics

Latvia . 7,325 parts In-Stock

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SupplyDigital Components

Austria . 7,317 parts In-Stock

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Problanco Electronics

Mexico . 6,341 parts In-Stock

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Corphita

USA . 1,980 parts In-Stock

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Kulean Microsystems

USA . 1,299 parts In-Stock

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1,299

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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Corohmni

South Africa . 156 parts In-Stock

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Overview

Unlock the power of reliable performance with the MCR703AT4-1 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers high-quality Silicon Controlled Rectifiers (SCR) that offer unparalleled efficiency and durability. Ideal for a wide range of applications, this SCR boasts a maximum on-state current of 2.6A and a maximum RMS on-state current of 4A, providing customers with exceptional value and peace of mind. Trust Onsemi to provide you with top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protects the components inside, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 0.075 mA

The low maximum DC gate trigger current helps in efficient and reliable triggering of the SCR, ensuring smooth and controlled operation.

Configuration: SINGLE

The single configuration simplifies the installation and usage of the SCR, making it user-friendly and easy to integrate into various systems.

Non Repetitive Peak On-state Current: 35 A

With a high non-repetitive peak on-state current, the SCR can handle sudden surges in current without getting damaged, ensuring reliable performance in demanding situations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation, making it suitable for a wide range of applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and makes soldering easier, enhancing the reliability and longevity of the product.

Maximum On-state Current: 2.6 A

The high maximum on-state current rating allows the SCR to handle higher loads, making it suitable for a variety of applications that require efficient current control.

Maximum Leakage Current: 0.2 mA

The low maximum leakage current ensures minimal power loss and energy wastage, making the SCR energy efficient and cost-effective to operate.

Repetitive Peak Reverse Voltage: 100 V

The repetitive peak reverse voltage rating of 100V provides reliable protection against reverse voltage spikes, ensuring the safety and longevity of the product.

No. of Terminals: 3

Having 3 terminals allows for easy and flexible connections, making the SCR versatile and adaptable for a variety of circuit configurations.

Package Style (Meter): IN-LINE

The in-line package style provides a compact and space-saving design, making it ideal for applications where space is limited.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature allows the SCR to function effectively in a wide range of temperature environments, ensuring reliable performance in diverse conditions.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) ensures precise and controlled triggering, making it suitable for applications that require accurate current regulation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature rating enables the SCR to operate in extreme cold conditions, expanding its usability in various industries and environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides corrosion resistance and reliable soldering connections, ensuring long-term stability and performance of the SCR.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process and reduces the chances of wiring errors, making it user-friendly and easy to use.

Maximum RMS On-state Current: 4 A

The high maximum RMS on-state current rating allows the SCR to handle continuous current flow without overheating, ensuring reliable and efficient operation under normal conditions.

Maximum DC Gate Trigger Voltage: 1 V

The low maximum DC gate trigger voltage ensures efficient triggering of the SCR with minimal power consumption, making it suitable for low-power applications.

Case Connection: ANODE

The anode case connection simplifies the installation and wiring process, ensuring proper polarity and reducing the risk of errors when integrating the SCR into a circuit.

Repetitive Peak Off-state Voltage: 100 V

The repetitive peak off-state voltage of 100V provides reliable protection against voltage spikes, ensuring the safety and durability of the SCR in various applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The minimum critical rate of rise of off-state voltage ensures fast and efficient response to sudden changes in voltage, making the SCR suitable for dynamic and high-speed applications.

Maximum Holding Current: 10 mA

The maximum holding current rating of 10mA ensures stable operation and prevents unintentional turn-off, enhancing the reliability and performance of the SCR in continuous operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR703AT4-1 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.075 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

10 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

35 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

2.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR703AT4-1 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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