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MCR703ARL

Onsemi

MCR703ARL by Onsemi

MCR703ARL by Onsemi is a single SCR with max on-state current of 2.6A and max RMS on-state current of 4A. It has a trigger voltage of 1V, suitable for applications requiring high surge currents in small outline packages. Ideal for circuits needing precise gate triggering at temperatures ranging from -40 to 110 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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Vyrian

USA . 1,535 parts In-Stock

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Digiode

USA . 1,411 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 380 parts In-Stock

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380

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Metaverse IC Inc.

Canada . 88,168 parts In-Stock

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Kulean Microsystems

USA . 6,656 parts In-Stock

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Problanco Electronics

Mexico . 6,201 parts In-Stock

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TANS Electronics

Latvia . 4,849 parts In-Stock

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SupplyDigital Components

Austria . 4,615 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Corphita

USA . 2,302 parts In-Stock

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Assy Fe

Spain . 2,149 parts In-Stock

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UHIMA Technologies

Türkiye . 711 parts In-Stock

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Corohmni

South Africa . 488 parts In-Stock

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Overview

Upgrade your electronic devices with the MCR703ARL by Onsemi, a high-quality Silicon Controlled Rectifier that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this SCR is designed for a range of applications, delivering value and efficiency to customers. With a maximum RMS On-state Current of 4A and a non-repetitive peak on-state current of 0.035A, this SCR is perfect for a variety of projects where precision and durability are key. Trust Onsemi's reputation for excellence and choose the MCR703ARL for your next electronic design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring reliable performance and durability.

Maximum DC Gate Trigger Current: 0.075 mA

Allows for precise gate triggering, making the SCR efficient and responsive in controlling the power flow.

Configuration: SINGLE

Simplifies the circuit design and makes installation easier, suitable for applications requiring single SCR operation.

Non Repetitive Peak On-state Current: 0.035 A

Handles short duration high current pulses effectively, suitable for applications with occasional high current requirements.

Surface Mount: YES

Facilitates easy PCB mounting, saving space and allowing for automated assembly in mass production.

Package Shape: RECTANGULAR

Enables compact and efficient PCB layout, ideal for applications with limited space constraints.

Terminal Form: GULL WING

Provides strong mechanical connection and ease of soldering, ensuring reliable electrical contacts.

Maximum On-state Current: 2.6 A

Handles moderate to high current loads, suitable for various power control applications.

Maximum Leakage Current: 0.2 mA

Ensures minimal power loss when the SCR is in the off state, contributing to energy efficiency.

Repetitive Peak Reverse Voltage: 100 V

Suitable for low to medium voltage applications, providing reliable reverse voltage protection.

No. of Terminals: 2

Simplified connection and installation, making it easy to integrate into different electronic systems.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the PCB and allows for efficient heat dissipation.

Maximum Operating Temperature: 110 °C

Can withstand high temperature environments, ensuring stable operation under varying conditions.

Trigger Device Type: SCR

Designed specifically for Silicon Controlled Rectifier applications, ensuring optimal performance in power control circuits.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely cold environments, suitable for a wide range of temperature conditions.

Terminal Finish: TIN LEAD

Provides good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Simplifies wiring and connection, reducing installation complexity.

Maximum RMS On-state Current: 4 A

Capable of handling high continuous current, suitable for applications requiring constant power control.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage ensures efficient control of the SCR, minimizing power loss during activation.

Case Connection: ANODE

Specific connection design for the SCR, ensuring proper current flow and control in the circuit.

Repetitive Peak Off-state Voltage: 100 V

Provides reliable off-state voltage protection, suitable for various power control applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Can handle rapid changes in off-state voltage, ensuring stability in power control applications.

Maximum Holding Current: 10 mA

Ability to maintain a stable on-state condition without continuous gate triggering, suitable for steady-state power control.

Peak Reflow Temperature °C: 235

Can withstand high temperature reflow soldering processes, enabling easy and reliable PCB assembly.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR703ARL attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.075 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

10 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Leakage Current:

.2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

.035 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

2.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR703ARL Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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