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MC14584BDTR2

Onsemi

MC14584BDTR2 by Onsemi

MC14584BDTR2 by Onsemi is a 6-function logic gate with Schmitt Trigger technology. It operates at a nominal voltage of 5V, with propagation delay of 250ns. Suitable for military-grade applications due to its wide temperature range and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 10,899 parts In-Stock

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Digiode

USA . 1,509 parts In-Stock

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Nova Conductors

Japan . 96 parts In-Stock

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AZTECH Wire

Italy . 874 parts In-Stock

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Ampacity Inc.

Singapore . 1,185 parts In-Stock

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SupplyDigital Components

Austria . 8,013 parts In-Stock

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TANS Electronics

Latvia . 2,866 parts In-Stock

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Problanco Electronics

Mexico . 2,800 parts In-Stock

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Corphita

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 853 parts In-Stock

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Aranea Global

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Microchip USA

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Corohmni

South Africa . 237 parts In-Stock

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Overview

Experience the reliability and precision of Onsemi with the MC14584BDTR2 Logic Gates. This high-quality product offers customers unmatched performance and durability, making it perfect for a wide range of applications. With its advanced technology and innovative design, this logic gate provides fast propagation delay and efficient power consumption, ensuring seamless operation in any system. Trust Onsemi to deliver exceptional value and superior benefits with the MC14584BDTR2 Logic Gates.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides protection to the internal components of the logic gates.

Propagation Delay At Nominal Supply: 250 ns

Fast propagation delay ensures quick switching between logic states, leading to efficient performance.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating automated assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, ensuring widespread compatibility with existing systems.

Load Capacitance (CL): 50 pF

Optimized load capacitance for efficient signal processing and reduced risk of signal distortion or loss.

Temperature Grade: MILITARY

Designed to operate reliably in extreme temperature conditions, making it suitable for military or industrial applications.

Technology: MOS

Utilizes Metal-Oxide-Semiconductor technology for low power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Logic Gates MC14584BDTR2 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

MC14584BDTR2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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