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MC10ELT28DR2

Onsemi

MC10ELT28DR2 by Onsemi

MC10ELT28DR2 by Onsemi is a voltage level translator with 2 functions, operating at -40 to 85 °C. It has a supply voltage range of 4.75-5.25 V and max delay of 5.5 ns. Ideal for PECL-TTL/TTL-PECL translation in industrial applications due to its ECL technology and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,897 parts In-Stock

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Digiode

USA . 225 parts In-Stock

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SupplyDigital Components

Austria . 7,260 parts In-Stock

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Kulean Microsystems

USA . 5,297 parts In-Stock

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TANS Electronics

Latvia . 3,337 parts In-Stock

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Corphita

USA . 2,431 parts In-Stock

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Problanco Electronics

Mexico . 537 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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Microchip USA

USA . 375 parts In-Stock

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UHIMA Technologies

Türkiye . 373 parts In-Stock

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Overview

Upgrade your voltage level translation needs with the MC10ELT28DR2 by Onsemi. Crafted by a leading manufacturer in the industry, this small outline package offers high-quality performance and reliability for a wide range of applications. With a nominal supply voltage of 5V and a maximum delay of 5.5ns, this IC translator provides seamless compatibility between PECL-TTL and TTL-PECL interfaces. Experience the value and benefits of smooth signal transmission and enhanced efficiency with the MC10ELT28DR2. Elevate your projects to the next level with Onsemi's top-notch technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components within the package, ensuring long-term reliability.

Surface Mount: YES

Allows for easy installation and integration onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 5.25 V

Supports a wide range of supply voltages, making it versatile and adaptable to different operating conditions.

No. of Functions: 2

Provides dual functionality in a single package, offering flexibility and efficiency in circuit design.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on a circuit board, maximizing layout options.

Power Supplies (V): 5

Designed to operate with a standard voltage level, ensuring compatibility with common power sources.

No. of Terminals: 8

Offers multiple connections for input and output signals, allowing for versatile connectivity in a circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on a circuit board, making it ideal for compact electronic devices.

Minimum Supply Voltage: 4.75 V

Supports a low supply voltage, providing flexibility for operating in power-constrained environments.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial applications where heat dissipation is a concern.

Output Characteristics: OPEN-EMITTER

The open-emitter output allows for customization and flexibility in signal processing and routing.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely cold environments, making it suitable for a wide range of operating conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and reliability in the assembly process.

Terminal Position: DUAL

Dual terminal positions offer redundancy and flexibility in connecting to external devices or circuits.

Maximum Seated Height: 1.75 mm

Low profile design saves space and allows for compact integration into electronic devices.

Width: 3.9 mm

Compact width dimensions contribute to the overall space-saving design of the product.

Output Polarity: COMPLEMENTARY

Complementary output polarity simplifies signal processing and interfacing with other components in a circuit.

Peak Reflow Temperature °C: 235

Withstands high reflow temperatures during the manufacturing process, ensuring reliable solder joints and component integrity.

Length: 4.9 mm

Compact length dimensions contribute to the overall space-saving design of the product.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring long-term durability and reliability.

Technology: ECL

Utilizes Emitter-Coupled Logic technology for high-speed operation and low power consumption, ideal for high-performance applications.

Terminal Form: GULL WING

Gull wing terminal form enables easy surface mounting and robust mechanical connections.

Nominal Supply Voltage: 5 V

Operates at a standard nominal voltage level, ensuring compatibility with common power sources.

Maximum Delay: 5.5 ns

Low maximum delay time ensures fast signal propagation, suitable for high-speed data transmission.

Terminal Pitch: 1.27 mm

Standard terminal pitch allows for easy soldering and assembly onto circuit boards.

Interface IC Type: PECL-TTL/TTL-PECL TRANSLATOR

Supports translation between PECL and TTL signal levels, enabling seamless communication between different types of devices.

Technical Specifications

Voltage Level Translators MC10ELT28DR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

5.5 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

No. of Bits:

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MC10ELT28DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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