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MC10ELT24DTR2

Onsemi

MC10ELT24DTR2 by Onsemi

MC10ELT24DTR2 by Onsemi is a voltage level translator with 8 terminals, operating b/w -40 to 85 °C. It has a supply voltage range of 4.5-5.5 V and offers TTL to ECL translation with a max delay of 2 ns. Ideal for industrial applications requiring precise signal conversion in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,515 parts In-Stock

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Digiode

USA . 2,187 parts In-Stock

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AZTECH Wire

Italy . 93 parts In-Stock

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$20.950

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QUARKTWIN TECHNOLOGY LTD

USA . 20,979 parts In-Stock

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SupplyDigital Components

Austria . 6,332 parts In-Stock

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Kulean Microsystems

USA . 6,148 parts In-Stock

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Microchip USA

USA . 6,102 parts In-Stock

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Problanco Electronics

Mexico . 1,812 parts In-Stock

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Corphita

USA . 1,744 parts In-Stock

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UHIMA Technologies

Türkiye . 643 parts In-Stock

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Corohmni

South Africa . 263 parts In-Stock

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TANS Electronics

Latvia . 215 parts In-Stock

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Overview

Upgrade your voltage level translation game with the MC10ELT24DTR2 by Onsemi. Built with precision and expertise, this voltage translator offers seamless compatibility and reliable performance for your electronic projects. From TTL to ECL translation, this small outline, thin profile, shrink pitch package ensures smooth operation even in industrial-grade temperatures. Trust Onsemi's reputation for quality and innovation to take your designs to the next level. Experience the difference with the MC10ELT24DTR2 and elevate your electronics today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Supply Voltage: 5.5 V

Suitable for applications requiring high voltage levels, increasing the versatility of the product.

Minimum Supply Voltage: 4.5 V

Can operate effectively within a wide range of supply voltages, providing flexibility in different scenarios.

Maximum Operating Temperature: 85 °C

Capable of operating in high temperature environments, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Capable of functioning in low temperature environments, ensuring reliability in various conditions.

Technology: ECL

Utilizes Emitter-Coupled Logic technology for fast and efficient signal translation, ideal for high-speed applications.

Terminal Form: GULL WING

Gull wing terminals provide a secure and reliable connection to the circuit board, maintaining signal integrity.

Nominal Supply Voltage: 5 V

Matches common voltage requirements in electronic systems, ensuring compatibility with existing components.

Maximum Delay: 2 ns

Offers minimal signal delay, crucial for maintaining accurate timing in communication between different voltage levels.

Technical Specifications

Voltage Level Translators MC10ELT24DTR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Nominal Negative Supply Voltage:

-5 V

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

5,-4.5/-5.2

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

MC10ELT24DTR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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