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MC100ELT28DR2G

Onsemi

MC100ELT28DR2G by Onsemi

MC100ELT28DR2G by Onsemi is a voltage level translator with 2 functions, operating at -40 to 85 °C. It has a supply voltage range of 4.75-5.25 V and max delay of 5.5 ns. Ideal for PECL-TTL/TTL-PECL translation in industrial applications due to its ECL technology and small outline package style.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,214 parts In-Stock

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Digiode

USA . 1,689 parts In-Stock

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Bristol Electronics

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AZTECH Wire

Italy . 1,018 parts In-Stock

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Component Stockers USA

USA . 209 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Microchip USA

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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GreenTree Electronics

Israel . 722 parts In-Stock

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Legend Electronics Inc. (Excess)

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Speed Components Ltd (Excess)

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Corohmni

South Africa . 465 parts In-Stock

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Overview

Discover the power of seamless voltage level translation with the MC100ELT28DR2G by Onsemi. Crafted with precision and expertise, this innovative product offers a wide range of applications in various industries. From industrial automation to telecommunications, this voltage translator guarantees smooth and efficient operation. With Onsemi's commitment to quality and reliability, customers can trust in the unmatched performance and value that the MC100ELT28DR2G brings to their projects. Experience unparalleled benefits and advantages today with this cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection to the internal components, making the product suitable for various operating conditions.

Maximum Supply Voltage: 5.25 V

With a maximum supply voltage of 5.25 V, this voltage level translator can handle high voltage applications with stability and reliability.

No. of Functions: 2

Having 2 functions allows the voltage level translator to support multiple input/output configurations, providing versatility in different circuit designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures the voltage level translator can function effectively even in elevated temperature environments.

Output Polarity: COMPLEMENTARY

Complementary output polarity ensures that the translated output signals maintain the correct relationship with the input signals, reducing the risk of errors in data transmission.

Technical Specifications

Voltage Level Translators MC100ELT28DR2G attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

5.5 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC100ELT28DR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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