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MC100ELT24D

Onsemi

MC100ELT24D by Onsemi

MC100ELT24D by Onsemi is a voltage level translator with 8 terminals and ECL technology. It operates b/w -40 to 85 °C, translating TTL to ECL signals with a max delay of 2 ns. Ideal for industrial applications requiring precise signal translation in compact spaces.

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Overview

Unlock seamless voltage level translation with the MC100ELT24D by Onsemi. Manufactured by a trusted industry leader, this small outline package offers superior quality and reliability. Ideal for industrial applications, this TTL to ECL translator ensures precise signal conversion with minimal delay, making it a valuable asset for any project. Experience the benefits of Onsemi's cutting-edge technology and elevate your designs with the MC100ELT24D.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan.

Surface Mount : YES

Allows for easy installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage : 5.5 V

Can handle higher supply voltages, increasing compatibility with different systems.

Minimum Supply Voltage : 4.5 V

Can operate at lower supply voltages, offering flexibility in power requirements.

Maximum Operating Temperature : 85 °C

Suitable for industrial environments with higher temperature ranges, ensuring reliability in harsh conditions.

Minimum Operating Temperature : -40 °C

Capable of functioning in extreme cold temperatures, making it versatile for various operating environments.

Output Characteristics : OPEN-EMITTER

Provides an open-collector output for easy interfacing with other devices, enhancing compatibility.

Nominal Supply Voltage : 5 V

Standard voltage level for compatibility with a wide range of applications.

Maximum Delay : 2 ns

Offers fast signal translation, reducing latency in data transmission.

Technical Specifications

Voltage Level Translators MC100ELT24D attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

Nominal Negative Supply Voltage:

-5 V

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5,-4.5/-5.2

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MC100ELT24D Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-554-0822, 5962015540822

NIIN

015540822

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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