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MBRP30060TG

Onsemi

MBRP30060TG by Onsemi

MBRP30060TG by Onsemi is a Schottky rectifier diode with 2 elements, max output current of 150A, and max reverse voltage of 60V. It is commonly used in power applications due to its high non-repetitive peak forward current capability of 2500A.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,398 parts In-Stock

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Vyrian

USA . 1,118 parts In-Stock

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Problanco Electronics

Mexico . 7,890 parts In-Stock

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SupplyDigital Components

Austria . 2,574 parts In-Stock

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Kulean Microsystems

USA . 472 parts In-Stock

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TANS Electronics

Latvia . 347 parts In-Stock

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Corphita

USA . 282 parts In-Stock

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Corohmni

South Africa . 148 parts In-Stock

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UHIMA Technologies

Türkiye . 62 parts In-Stock

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Overview

Unleash the power of efficiency with the MBRP30060TG by Onsemi, a high-quality diode that promises reliability and performance. Manufactured by Onsemi, a trusted brand known for its cutting-edge technology, this diode is designed for power applications, offering customers unmatched value and benefits. With a maximum output current of 150A and a repetitive peak reverse voltage of 60V, this diode is perfect for a wide range of applications. Upgrade your power systems with the MBRP30060TG and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, ensuring long-term reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration and two elements provide efficient power handling capabilities for various applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit designs and mounting.

No. of Terminals: 2

Having only 2 terminals simplifies the installation process and reduces the chances of wiring errors.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables secure and stable mounting for reliable operation.

Application: POWER

Designed for power applications, this diode can handle high output currents effectively.

Terminal Position: UPPER

Upper terminal position contributes to better heat dissipation and thermal management.

Case Connection: CATHODE

Having cathode case connection simplifies circuit design and ensures proper polarity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC power to DC power with minimal losses.

Maximum Output Current: 150 A

High maximum output current rating allows the diode to handle demanding power requirements.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop for improved efficiency.

No. of Elements: 2

Having 2 elements increases the diode's power handling capability and redundancy.

Maximum Repetitive Peak Reverse Voltage: 60 V

With a high maximum repetitive peak reverse voltage, this diode can withstand reverse voltage stress without failure.

Maximum Non Repetitive Peak Forward Current: 2500 A

Capable of handling high non-repetitive peak forward currents, making it suitable for power surge protection applications.

Diode Element Material: SILICON

Silicon material provides good thermal and electrical properties, ensuring stable performance under varying conditions.

Technical Specifications

Diodes & Rectifiers MBRP30060TG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PUFM-X2

Maximum Non Repetitive Peak Forward Current:

2500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

150 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

MBRP30060TG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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