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MBRP20030CTLG

Onsemi

MBRP20030CTLG by Onsemi

MBRP20030CTLG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max repetitive peak reverse voltage of 30V. It is designed for power applications with a max output current of 100A and operating temperature up to 150 °C. The package style is flange mount with plastic/epoxy body material, suitable for UL recognized standards.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,830 parts In-Stock

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Vyrian

USA . 1,526 parts In-Stock

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SupplyDigital Components

Austria . 7,953 parts In-Stock

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Problanco Electronics

Mexico . 3,155 parts In-Stock

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TANS Electronics

Latvia . 2,071 parts In-Stock

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Corphita

USA . 1,698 parts In-Stock

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Kulean Microsystems

USA . 774 parts In-Stock

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Corohmni

South Africa . 134 parts In-Stock

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UHIMA Technologies

Türkiye . 74 parts In-Stock

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Overview

Discover the power of the MBRP20030CTLG by Onsemi, a high-quality diode & rectifier designed for ultimate performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this product is perfect for power applications where efficiency and durability are key. With a common cathode configuration and Schottky technology, this diode offers a maximum output current of 100A and a maximum repetitive peak reverse voltage of 30V. Upgrade your power systems with the MBRP20030CTLG and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diodes lightweight and durable, suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for easy circuit integration and efficient power management.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, these diodes can handle high-power applications without overheating.

Technology: SCHOTTKY

The Schottky technology used in these diodes ensures low forward voltage drop and fast switching speeds, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage of 30V ensures reliable and stable performance in various power supply and rectification circuits.

Technical Specifications

Diodes & Rectifiers MBRP20030CTLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PUFM-X2

Maximum Non Repetitive Peak Forward Current:

1500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

100 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

MBRP20030CTLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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