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MBRP2045N

Onsemi

MBRP2045N by Onsemi

MBRP2045N by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -65 °C to 150°C, has a max repetitive peak reverse voltage of 45V, and is ideal for flange mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,490 parts In-Stock

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Vyrian

USA . 1,825 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Problanco Electronics

Mexico . 8,280 parts In-Stock

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SupplyDigital Components

Austria . 7,555 parts In-Stock

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Kulean Microsystems

USA . 7,337 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,931 parts In-Stock

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TANS Electronics

Latvia . 4,261 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 807 parts In-Stock

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UHIMA Technologies

Türkiye . 715 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 87 parts In-Stock

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Overview

Upgrade your electronic devices with the MBRP2045N by Onsemi, a high-quality Schottky rectifier diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for common cathode configuration with 2 elements, making it ideal for a wide range of applications. With a maximum output current of 20A and a maximum repetitive peak reverse voltage of 45V, this diode ensures efficient power management and protection. Experience the value and benefits of this product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan and reliable performance.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient current flow and easy integration into circuit designs.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into various electronic systems.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

Can operate in cold environments without sacrificing performance.

Diode Type: RECTIFIER DIODE

Efficiently converts AC to DC, making it ideal for power supply applications.

Technology: SCHOTTKY

Provides low forward voltage drop and fast switching speeds, improving overall efficiency.

Maximum Output Current: 20 A

Capable of handling high currents, suitable for various power applications.

Maximum Repetitive Peak Reverse Voltage: 45 V

Provides reliable reverse voltage protection in circuits.

Diode Element Material: SILICON

Offers high efficiency and low leakage current, enhancing overall performance.

Technical Specifications

Diodes & Rectifiers MBRP2045N attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

MBRP2045N Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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