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MBRP20060CT

Onsemi

MBRP20060CT by Onsemi

MBRP20060CT by Onsemi is a Schottky rectifier diode with 2 elements, max output current of 100A, and max repetitive peak reverse voltage of 60V. It is commonly used in power applications due to its high efficiency and low forward voltage drop (0.91V). The diode's package style is flange mount with a plastic/epoxy body material.

Median Price

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Lifecycle Status

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Kulean Microsystems

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TANS Electronics

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Overview

Looking for a high-quality diode and rectifier for your power applications? Look no further than the MBRP20060CT by Onsemi. With its common cathode configuration and Schottky technology, this rectangular, flange mount package offers superior performance and reliability. Whether you're designing power supplies, inverters, or motor drives, this product delivers a maximum output current of 100A and a maximum repetitive peak reverse voltage of 60V, ensuring optimal functionality. Trust Onsemi's reputation for excellence and choose the MBRP20060CT for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration into circuit designs, providing flexibility and convenience.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easier to mount and fit into various applications, optimizing space usage.

No. of Terminals: 2

Having only 2 terminals simplifies the installation process, making it user-friendly and reducing the risk of errors.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure and stable mounting options, ensuring proper placement and connection in power applications.

Application: POWER

Specifically designed for power applications, this diode and rectifier product is capable of handling high currents and voltages efficiently.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this product can withstand elevated temperatures without sacrificing performance.

Terminal Finish: NICKEL

The nickel terminal finish ensures good conductivity and corrosion resistance, improving the overall reliability of the product.

Terminal Position: UPPER

The upper terminal position simplifies the connection process and allows for easier access during installation and maintenance.

Case Connection: CATHODE

Having the case connection at the cathode provides a convenient reference point for circuit design and troubleshooting.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for proper soldering and mounting processes, ensuring secure and reliable connections.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC) efficiently, making it ideal for power applications.

Maximum Forward Voltage (VF): 0.91 V

The low maximum forward voltage of 0.91V minimizes power losses and improves overall efficiency in power conversion applications.

Maximum Output Current: 100 A

Capable of handling a maximum output current of 100A, this product is suitable for high-power applications that require reliable current handling.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode product offers fast switching speeds and low forward voltage drop, enhancing efficiency and performance.

No. of Elements: 2

With 2 elements in the diode configuration, this product provides redundancy and improved current handling capabilities, enhancing reliability in power applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

The maximum repetitive peak reverse voltage of 60V ensures protection against reverse currents and overvoltage situations, increasing the reliability of the product.

Maximum Non Repetitive Peak Forward Current: 1500 A

Capable of handling a maximum non-repetitive peak forward current of 1500A, this product is suitable for high-power applications with transient current demands.

Diode Element Material: SILICON

Using silicon as the diode element material provides good thermal and electrical properties, ensuring reliable performance and durability in demanding power applications.

Technical Specifications

Diodes & Rectifiers MBRP20060CT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.91 V

JESD-30 Code:

R-PUFM-X2

Maximum Non Repetitive Peak Forward Current:

1500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

100 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

MBRP20060CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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