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MBRP3010NTU

Onsemi

MBRP3010NTU by Onsemi

MBRP3010NTU by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 30A. It operates b/w -65°C to 150°C, has a max forward voltage of 0.67V, and a repetitive peak reverse voltage of 100V. Ideal for applications requiring high current rectification in electronic circuits.

Median Price

$0.990

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 174 parts In-Stock

1+ parts

$0.384

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-

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$0.331

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174

$0.384

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$0.331

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Rochester

USA . 19,170 parts In-Stock

1+ parts

-

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$0.972

1k+ parts

$0.807

10k+ parts

$0.720

19,170

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$0.972

$0.807

$0.720

Verical

USA . 13,170 parts In-Stock

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$1.009

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$0.899

13,170

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$1.009

$0.899

Flip Electronics (Authorized)

USA . 9,042 parts In-Stock

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DigiKey

USA . 387 parts In-Stock

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$1.220

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387

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$1.220

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Digiode

USA . 1,397 parts In-Stock

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$0.365

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$0.365

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Vyrian

USA . 1,205 parts In-Stock

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$0.384

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Forefront Electronics and Design

USA . 20 parts In-Stock

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$36.750

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$36.750

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Flip Electronics

USA . 9,042 parts In-Stock

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DigiKey Marketplace

USA . 9,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,900 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,519 parts In-Stock

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$0.346

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$0.346

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Corohmni

South Africa . 118 parts In-Stock

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$0.384

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Microchip USA

USA . 162 parts In-Stock

1+ parts

$10.470

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$10.400

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$10.370

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$10.340

162

$10.470

$10.400

$10.370

$10.340

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Continental Prestige Electronics

USA . 19,170 parts In-Stock

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$1.190

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TANS Electronics

Latvia . 7,839 parts In-Stock

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Lixinc

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Kulean Microsystems

USA . 3,853 parts In-Stock

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SupplyDigital Components

Austria . 3,758 parts In-Stock

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Problanco Electronics

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QUARKTWIN TECHNOLOGY LTD

USA . 2,717 parts In-Stock

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Supply Digital

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Perfect Parts

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Authorized Procurement Solutions

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 776 parts In-Stock

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Kepictronics

USA . 34 parts In-Stock

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Overview

Elevate your electronic projects with the MBRP3010NTU by Onsemi. With its high-quality manufacturing and reliable performance, this diode rectifier offers unmatched value and benefits to customers. Perfect for a wide range of applications in power supplies, battery chargers, and motor control systems, this product features a common cathode configuration with two elements for efficient operation. Trust Onsemi to deliver superior technology and innovation with the MBRP3010NTU, providing maximum output current of 30A and a maximum repetitive peak reverse voltage of 100V. Take your projects to the next level with this top-of-the-line diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuit designs and provides efficient current flow.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various operating environments.

Diode Type: RECTIFIER DIODE

Designed specifically for rectifying alternating current, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.67 V

Low forward voltage drop means less power loss and increased efficiency in the circuit.

Maximum Output Current: 30 A

Capable of handling high current loads, making it suitable for a wide range of applications.

Technology: SCHOTTKY

Schottky diodes have faster switching speeds and lower forward voltage drop compared to standard diodes.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can withstand high reverse voltage, providing protection for the circuit against voltage spikes.

Diode Element Material: SILICON

Silicon diodes are durable, reliable, and widely used in electronic circuits.

Technical Specifications

Diodes & Rectifiers MBRP3010NTU attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREEWHEELING DIODE

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.67 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRP3010NTU Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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