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MBRP30035L

Onsemi

MBRP30035L by Onsemi

The Onsemi MBRP30035L is a Schottky rectifier diode with a max repetitive peak reverse voltage of 35V and max output current of 300A. It operates at a max temperature of 150°C, making it suitable for power applications. The diode has a low forward voltage of 0.57V and is housed in a rectangular flange mount package.

Median Price

$16.710

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,549 parts In-Stock

1+ parts

-

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$14.430

1k+ parts

$12.910

10k+ parts

$12.150

4,549

-

$14.430

$12.910

$12.150

DigiKey

USA . 4,549 parts In-Stock

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$18.990

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4,549

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$18.990

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Distributors (In-Stock)

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Digiode

USA . 317 parts In-Stock

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$15.266

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317

$15.266

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Vyrian

USA . 2,046 parts In-Stock

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$16.070

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$16.070

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DigiKey Marketplace

USA . 4,974 parts In-Stock

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Resion

USA . 83 parts In-Stock

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Corphita

USA . 302 parts In-Stock

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$14.463

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302

$14.463

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Corohmni

South Africa . 218 parts In-Stock

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$16.070

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218

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Microchip USA

USA . 9,164 parts In-Stock

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Continental Prestige Electronics

USA . 4,974 parts In-Stock

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Fulton Briggs Corp.

USA . 4,624 parts In-Stock

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SupplyDigital Components

Austria . 3,989 parts In-Stock

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TANS Electronics

Latvia . 3,887 parts In-Stock

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Kulean Microsystems

USA . 2,374 parts In-Stock

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Problanco Electronics

Mexico . 2,127 parts In-Stock

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Kepictronics

USA . 1,300 parts In-Stock

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UHIMA Technologies

Türkiye . 162 parts In-Stock

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Overview

Experience superior performance and reliability with the MBRP30035L by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers for power applications. The MBRP30035L offers customers value with its high efficiency and maximum output current of 300A, making it ideal for demanding power systems. Trust Onsemi to provide the best-in-class technology and innovative solutions for all your power needs. Choose the MBRP30035L for unparalleled performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it ideal for various applications in different environments.

Package Shape: RECTANGULAR

Allows for easy integration and mounting in a variety of systems and designs.

Application: POWER

Designed specifically for power applications, ensuring efficient performance and reliability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in demanding conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting alternating current to direct current, making this diode versatile and necessary for power applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drops and faster switching speeds, improving efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 35 V

Provides protection against reverse voltage, ensuring the diode's longevity and reliability.

Maximum Output Current: 300 A

Capable of handling high currents, making it suitable for power applications.

Technical Specifications

Diodes & Rectifiers MBRP30035L attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JESD-30 Code:

R-PUFM-X1

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

3000 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

300 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBRP30035L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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