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MBRP20035L

Onsemi

MBRP20035L by Onsemi

MBRP20035L by Onsemi is a Schottky rectifier diode with a max repetitive peak reverse voltage of 35V and max output current of 200A. It has a package style of flange mount for power applications, operating at temperatures up to 150°C. The diode element material is silicon with a max forward voltage of 0.57V.

Median Price

$11.710

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 6,205 parts In-Stock

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-

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$10.110

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$9.040

10k+ parts

$8.510

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$10.110

$9.040

$8.510

DigiKey

USA . 6,205 parts In-Stock

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$11.710

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$11.710

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Verical

USA . 74 parts In-Stock

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$12.637

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$11.300

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$10.637

74

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$12.637

$11.300

$10.637

Distributors (In-Stock)

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Digiode

USA . 1,333 parts In-Stock

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$10.697

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1,333

$10.697

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Vyrian

USA . 219 parts In-Stock

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$11.260

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DigiKey Marketplace

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R&J Components

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Distributors (Availability)

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Corphita

USA . 1,002 parts In-Stock

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$10.134

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$10.134

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Corohmni

South Africa . 361 parts In-Stock

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$11.260

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361

$11.260

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Microchip USA

USA . 338 parts In-Stock

1+ parts

$30.270

100+ parts

$29.840

1k+ parts

$29.620

10k+ parts

$29.400

338

$30.270

$29.840

$29.620

$29.400

QUARKTWIN TECHNOLOGY LTD

USA . 14,346 parts In-Stock

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TANS Electronics

Latvia . 8,206 parts In-Stock

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Problanco Electronics

Mexico . 7,022 parts In-Stock

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Montano Global Distributors

Canada . 6,955 parts In-Stock

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Continental Prestige Electronics

USA . 6,205 parts In-Stock

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SupplyDigital Components

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LOOK Integrated Logistics

Peru . 3,754 parts In-Stock

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LMD Electronica

Estonia . 3,728 parts In-Stock

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Kulean Microsystems

USA . 3,431 parts In-Stock

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NIA Electronics

USA . 1,300 parts In-Stock

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Ledger Components

France . 1,300 parts In-Stock

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Metaverse IC Inc.

Canada . 550 parts In-Stock

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Kepictronics

USA . 396 parts In-Stock

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UHIMA Technologies

Türkiye . 265 parts In-Stock

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Overview

Unleash the power of innovation with the MBRP20035L by Onsemi. Crafted with precision and quality, this Schottky rectifier diode offers unmatched performance in power applications. With a maximum output current of 200A and a maximum repetitive peak reverse voltage of 35V, this diode is designed to meet the demands of today's dynamic technology landscape. Experience the reliability and efficiency that Onsemi is renowned for, while enjoying the benefits of superior design and engineering. Elevate your projects with the MBRP20035L and discover a world of possibilities at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protection for the diode, making it suitable for power applications.

Package Shape: RECTANGULAR

Allows for easy mounting and placement in circuits.

Application: POWER

Designed specifically for power applications, ensuring efficient performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, increasing the reliability and longevity of the diode.

Maximum Output Current: 200 A

Capable of handling high current loads, making it suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to standard diodes.

Technical Specifications

Diodes & Rectifiers MBRP20035L attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JESD-30 Code:

R-PUFM-X1

Maximum Non Repetitive Peak Forward Current:

2000 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

200 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MBRP20035L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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