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MBRP30060T

Onsemi

MBRP30060T by Onsemi

The Onsemi MBRP30060T is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 60V. It has a max output current of 150A and non-repetitive peak forward current of 2500A. Ideal for power applications, this diode features a plastic/epoxy package body material and tin lead terminal finish.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

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Vyrian

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TANS Electronics

Latvia . 6,147 parts In-Stock

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Kulean Microsystems

USA . 3,115 parts In-Stock

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Problanco Electronics

Mexico . 2,312 parts In-Stock

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SupplyDigital Components

Austria . 1,967 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 507 parts In-Stock

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Corohmni

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Overview

Experience the ultimate in power efficiency and reliability with the MBRP30060T from Onsemi. As a leading manufacturer of diodes and rectifiers, Onsemi has crafted a product that is perfect for power applications. With a maximum output current of 150A and a maximum repetitive peak reverse voltage of 60V, this SCHOTTKY technology diode offers unmatched performance. Whether you're looking to improve your power supply or enhance your electronic devices, the MBRP30060T delivers superior quality and value. Trust Onsemi to provide you with the best in power solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the diodes, making them durable and reliable for long-term use.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy connection in circuit designs, and having 2 elements provides redundancy and ensures continuous operation even if one element fails.

Package Shape: RECTANGULAR

Rectangular shape makes it easy for installation and mounting in various applications.

No. of Terminals: 2

Having only 2 terminals simplifies the wiring and connection process.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure and stable installation in power applications.

Application: POWER

Designed specifically for power applications, ensuring efficient and reliable performance in high-power circuits.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and ensures proper connection in the circuit.

Terminal Position: UPPER

Upper terminal position makes it convenient for connecting wires and components in the circuit.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures proper polarity.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC power, making them ideal for power applications.

Maximum Output Current: 150 A

High maximum output current capability allows for handling large power loads with ease.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching, making the diodes efficient and suitable for high-frequency applications.

No. of Elements: 2

Having 2 elements provides redundancy and reliability in case one element fails, ensuring continuous operation.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage allows for safe operation in high-voltage circuits.

Maximum Non Repetitive Peak Forward Current: 2500 A

High maximum non-repetitive peak forward current capability makes the diodes suitable for handling surge currents and high-power transients.

Diode Element Material: SILICON

Silicon diode element material is widely used for its reliability and efficiency in power applications.

Technical Specifications

Diodes & Rectifiers MBRP30060T attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PUFM-X2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

2500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

150 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBRP30060T Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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