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MBRP3010N

Onsemi

MBRP3010N by Onsemi

MBRP3010N by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 30A. It operates b/w -65 °C to 150°C, has a max reverse voltage of 100V, and peak forward current of 250A. Ideal for applications requiring high power efficiency in a compact flange mount package.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,701 parts In-Stock

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Vyrian

USA . 1,817 parts In-Stock

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GreenTree Electronics

Israel . 7,996 parts In-Stock

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Kulean Microsystems

USA . 7,663 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,332 parts In-Stock

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Problanco Electronics

Mexico . 4,717 parts In-Stock

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SupplyDigital Components

Austria . 4,590 parts In-Stock

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Corphita

USA . 2,770 parts In-Stock

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TANS Electronics

Latvia . 2,179 parts In-Stock

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Corohmni

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Overview

Enhance your electronic designs with the MBRP3010N diode by Onsemi, a high-quality product from a trusted manufacturer. Perfect for a wide range of applications in the Diodes & Rectifiers category, this rectifier diode offers reliable performance and durability. With a maximum output current of 30A and a maximum repetitive peak reverse voltage of 100V, this Schottky diode ensures efficient power management. Upgrade your projects with the MBRP3010N and experience the value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body material provides durability and protection to the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and easy integration into circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and space-saving design in electronic applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures the diodes can withstand elevated temperatures without degradation in performance.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching characteristics, making it ideal for high-frequency applications.

Maximum Output Current: 30 A

High maximum output current of 30 A allows for the handling of large currents, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage of 100 V provides reliable reverse voltage protection in circuits.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and low leakage current, ensuring reliable performance over time.

Technical Specifications

Diodes & Rectifiers MBRP3010N attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREEWHEELING DIODE

Application:

GENERAL PURPOSE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

MBRP3010N Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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