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LC75056PE-H

Onsemi

LC75056PE-H by Onsemi

LC75056PE-H by Onsemi is a CMOS DSP with TIN BISMUTH finish. It can withstand 30s at 260 °C peak reflow temp, MSL level 3. Ideal for digital signal processing applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 860 parts In-Stock

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Digiode

USA . 688 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,802 parts In-Stock

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SupplyDigital Components

Austria . 7,767 parts In-Stock

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Problanco Electronics

Mexico . 7,644 parts In-Stock

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Microchip USA

USA . 6,257 parts In-Stock

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Kulean Microsystems

USA . 3,692 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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TANS Electronics

Latvia . 1,251 parts In-Stock

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Corphita

USA . 631 parts In-Stock

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UHIMA Technologies

Türkiye . 602 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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Overview

Unleash the power of advanced digital signal processing with the LC75056PE-H by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. The LC75056PE-H belongs to the category of Digital Signal Processors (DSPs) and offers unparalleled performance and reliability. Whether you're designing cutting-edge audio systems, communication devices, or industrial automation solutions, this versatile chip will elevate your project to new heights. Experience the value and benefits of Onsemi's technology with the LC75056PE-H.

Feature Benefit Bullets

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish allows for reliable soldering connections, ensuring the product's longevity and durability.

Maximum Time At Peak Reflow Temperature (s): 30

With a short reflow time of 30 seconds, the product can be easily and quickly integrated into manufacturing processes, improving efficiency.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures proper soldering and connection integrity, making the product suitable for various industrial applications.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

The peripheral IC type being a digital signal processor and other enhances the product's performance in processing digital signals efficiently and accurately.

Technology: CMOS

CMOS technology offers low power consumption and high integration capabilities, making the product energy-efficient and compact.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates that the product has a moderate sensitivity to moisture, allowing for safe storage and handling in typical manufacturing environments.

Technical Specifications

Digital Signal Processors (DSPs) LC75056PE-H attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Onsemi

Specs

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

Peak Reflow Temperature (C):

260

Technology:

CMOS

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Peripheral IC Type:

Trade Compliance

LC75056PE-H Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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