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FJX945Y

Onsemi

FJX945Y by Onsemi

FJX945Y by Onsemi is a NPN BJT transistor with VCEsat of 0.3V, hFE of 120, and IC of 0.15A. Ideal for amplifier applications, it has a max operating temp of 150 °C and fT of 300MHz. The GULL WING terminal form and small outline package make it suitable for surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,505 parts In-Stock

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Digiode

USA . 1,253 parts In-Stock

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Native Components

USA . 656 parts In-Stock

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$0.097

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$0.093

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$0.093

Northwest PG Solutions

USA . 1,421 parts In-Stock

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$0.107

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$0.094

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Kulean Microsystems

USA . 7,313 parts In-Stock

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TANS Electronics

Latvia . 6,792 parts In-Stock

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SupplyDigital Components

Austria . 4,427 parts In-Stock

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Problanco Electronics

Mexico . 3,911 parts In-Stock

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Supply Digital

USA . 1,006 parts In-Stock

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Corphita

USA . 640 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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Corohmni

South Africa . 460 parts In-Stock

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Overview

Experience the superior performance of the FJX945Y by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed to elevate your amplifier applications. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust in the reliability and durability of this NPN transistor. Its low VCEsat, high DC current gain, and impressive transition frequency make it a valuable asset for your projects. Upgrade to the FJX945Y today and unleash the full potential of your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easy to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Easily mountable on circuit boards, facilitating efficient and compact circuit design.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and orientation in circuit layouts.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and connection to circuit boards.

No. of Terminals: 3

Simple 3-terminal design reduces complexity in circuit connections.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power dissipation capabilities ensure stable operation and longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables compact circuit designs.

Maximum Power Dissipation Ambient: 0.2 W

Can handle power dissipation effectively in various ambient conditions.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance reduces signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

Adequate collector-emitter voltage rating for typical amplifier applications.

Transistor Element Material: SILICON

Silicon-based transistor element offers high performance and reliability in amplification tasks.

Maximum Collector Current (IC): 0.15 A

Sufficient collector current capacity for typical amplifier circuits.

Terminal Position: DUAL

Dual terminal position allows for easy connection and integration into circuit layouts.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency enables efficient amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FJX945Y attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

FJX945Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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