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FJX945G

Onsemi

FJX945G by Onsemi

FJX945G by Onsemi is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 200, and fT of 300MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 50V. It features a gull wing terminal form in a plastic/epoxy body suitable for surface mount assembly.

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TANS Electronics

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Problanco Electronics

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Northwest PG Solutions

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Corphita

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Supply Digital

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SupplyDigital Components

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UHIMA Technologies

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Overview

Unleash the power of innovation with the FJX945G small signal bipolar junction transistor by Onsemi. Crafted with precision and designed for excellence, this NPN transistor is your key to unlocking unparalleled amplification capabilities. Versatile and reliable, this transistor is ideal for a wide range of applications, from audio amplifiers to signal processing circuits. Experience enhanced performance and efficiency with the FJX945G, delivering a seamless blend of quality and value that sets it apart from the rest. Elevate your projects with Onsemi's commitment to excellence embodied in every aspect of this cutting-edge transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor from external elements, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used and versatile for amplification and switching applications.

Configuration: SINGLE

Simplifies circuit design and layout as only one transistor is needed.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, providing efficient signal amplification.

Surface Mount: YES

Allows for easy and compact mounting on PCBs, saving space and simplifying assembly.

Maximum VCEsat: 0.3 V

Low saturation voltage minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Easily fits onto PCBs and facilitates efficient layout design.

Terminal Form: GULL WING

Provides reliable connection and easy soldering during PCB assembly.

No. of Terminals: 3

Simple configuration with three terminals for easy integration into circuits.

Maximum Power Dissipation (Abs): 0.2 W

Handles moderate power levels without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space on the PCB and allows for dense circuit layouts.

Maximum Power Dissipation Ambient: 0.2 W

Can safely dissipate heat in various operating conditions, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance minimizes signal distortion and improves high-frequency response.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and reliability for the transistor.

Maximum Collector Current (IC): 0.15 A

Suitable for low to moderate current amplification applications with efficient performance.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and circuit configurations.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for efficient amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FJX945G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

FJX945G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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