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FJX945L

Onsemi

FJX945L by Onsemi

FJX945L by Onsemi is a NPN BJT transistor with VCEsat of 0.3V, hFE of 350, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 300MHz and low collector-emitter voltage of 50V. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

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Vyrian

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Digiode

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Native Components

USA . 684 parts In-Stock

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Northwest PG Solutions

USA . 2,134 parts In-Stock

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TANS Electronics

Latvia . 8,063 parts In-Stock

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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UHIMA Technologies

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Problanco Electronics

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Corohmni

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Overview

Experience the exceptional quality and performance of the Onsemi FJX945L Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted industry leader, this NPN transistor is perfect for amplifier applications. Its compact package design and high DC current gain ensure optimal functionality and reliability. With a maximum VCEsat of 0.3V and a nominal transition frequency of 300 MHz, this transistor offers excellent value and efficiency. Trust Onsemi for your electronic component needs and elevate your projects to the next level with the FJX945L.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable for easy handling and long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high efficiency and fast switching speeds.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to work with in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio or signal amplification.

Surface Mount: YES

The surface mount capability allows for easy integration onto PCBs, saving space and enabling efficient assembly.

Maximum VCEsat: 0.3 V

The low maximum VCEsat of 0.3V indicates minimal energy loss and high efficiency in amplification processes.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact and organized layout for the transistor within a circuit design.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and strong mechanical connections in surface mount applications.

No. of Terminals: 3

Having 3 terminals enables easy connections and helps maintain electrical stability within the circuit.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, the transistor can handle heat efficiently and operate reliably under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density circuit designs.

Maximum Power Dissipation Ambient: 0.2 W

The maximum power dissipation of 0.2W in ambient conditions ensures stable performance and reliability in various operating environments.

Minimum DC Current Gain (hFE): 350

A minimum DC current gain of 350 ensures consistent amplification of signals with high fidelity and minimal distortion.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high-temperature environments without compromising performance.

Maximum Collector-Base Capacitance: 2.5 pF

The low collector-base capacitance of 2.5pF minimizes signal distortion and improves signal response in amplifier circuits.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V provides a wide voltage range for signal amplification applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in the transistor, making it suitable for demanding amplifier applications.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15A allows the transistor to handle moderate power levels in amplifier circuits.

Terminal Position: DUAL

Dual terminal position enables easy connections and provides additional stability in the circuit layout.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency of 300MHz allows for fast and accurate signal amplification with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FJX945L attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

350

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

FJX945L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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