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FJX945O

Onsemi

FJX945O by Onsemi

FJX945O by Onsemi is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 70, and IC of 0.15A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 300MHz. Its Gull Wing terminals make it suitable for surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,599 parts In-Stock

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Vyrian

USA . 324 parts In-Stock

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Native Components

USA . 580 parts In-Stock

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$0.097

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$0.093

580

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$0.093

Northwest PG Solutions

USA . 2,166 parts In-Stock

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$0.107

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$0.094

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$0.094

Problanco Electronics

Mexico . 6,714 parts In-Stock

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SupplyDigital Components

Austria . 6,706 parts In-Stock

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Kulean Microsystems

USA . 4,760 parts In-Stock

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Corphita

USA . 3,008 parts In-Stock

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Supply Digital

USA . 1,516 parts In-Stock

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TANS Electronics

Latvia . 1,486 parts In-Stock

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Corohmni

South Africa . 54 parts In-Stock

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UHIMA Technologies

Türkiye . 30 parts In-Stock

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Overview

Upgrade your electronic projects with the FJX945O by Onsemi, a superior Small Signal Bipolar Junction Transistor that guarantees top-notch performance and reliability. Manufactured by Onsemi, a renowned industry leader, this NPN transistor is ideal for amplifier applications and boasts a low VCEsat of 0.3V, ensuring efficient power usage. With a maximum operating temperature of 150 °C and a nominal transition frequency of 300 MHz, this transistor offers unmatched value and benefits to customers seeking high-quality components for their designs. Experience the difference with the FJX945O and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to work with.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs.

Maximum VCEsat: 0.3 V

Low VCE saturation voltage results in minimal power loss.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications.

Maximum Collector Current (IC): 0.15 A

Can handle moderate current levels.

Nominal Transition Frequency (fT): 300 MHz

Allows for high-frequency operation, suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FJX945O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

FJX945O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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