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FJX945

Onsemi

FJX945 by Onsemi

FJX945 by Onsemi is a NPN BJT transistor with a max VCEsat of 0.3V and min hFE of 70, ideal for amplifier applications. It has a max IC of 0.15A, fT of 300MHz, and can operate at temperatures up to 150 °C. The package is small outline with GULL WING terminals in a RECTANGULAR shape made from PLASTIC/EPOXY material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,833 parts In-Stock

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Digiode

USA . 2,805 parts In-Stock

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Native Components

USA . 326 parts In-Stock

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$0.092

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$0.088

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Northwest PG Solutions

USA . 146 parts In-Stock

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$0.089

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TANS Electronics

Latvia . 7,471 parts In-Stock

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Problanco Electronics

Mexico . 5,337 parts In-Stock

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Kulean Microsystems

USA . 3,729 parts In-Stock

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SupplyDigital Components

Austria . 2,611 parts In-Stock

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Corphita

USA . 1,986 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 931 parts In-Stock

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Corohmni

South Africa . 351 parts In-Stock

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Overview

Enhance your electronic projects with the FJX945 Small Signal Bipolar Junction Transistor from Onsemi. As a leading manufacturer in the industry, Onsemi ensures high quality and reliability in all their products. The FJX945 NPN transistor is perfect for amplifier applications, offering a low VCEsat of only 0.3V and a minimum hFE of 70. With its small outline package and dual terminal position, this transistor is easy to integrate into your designs. Unlock the potential of your projects with the FJX945 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, ensuring compatibility with standard circuit configurations.

Configuration: SINGLE

Simplifies circuit design and troubleshooting.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in such applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power dissipation and improves efficiency in amplification circuits.

Package Shape: RECTANGULAR

Provides a compact design for space-constrained applications.

Terminal Form: GULL WING

Facilitates easy soldering and mounting on PCBs.

No. of Terminals: 3

Simplifies the connection process and reduces the chances of errors.

Maximum Power Dissipation (Abs): 0.2 W

Handles power efficiently, ensuring reliability and longevity.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on the PCB.

Maximum Power Dissipation Ambient: 0.2 W

Suitable for low-power applications, ensuring efficiency and reliability.

Minimum DC Current Gain (hFE): 70

Ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, enhancing overall reliability.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance minimizes signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

Handles moderate voltage requirements, suitable for a wide range of applications.

Transistor Element Material: SILICON

Provides reliable and consistent performance over the operational lifespan.

Maximum Collector Current (IC): 0.15 A

Sufficient current handling capability for many small signal applications.

Terminal Position: DUAL

Facilitates easy connection and integration into circuits.

Nominal Transition Frequency (fT): 300 MHz

Suitable for high-frequency applications, ensuring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FJX945 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

FJX945 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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