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FGH80N60FDTU

Onsemi

FGH80N60FDTU by Onsemi

FGH80N60FDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a built-in diode, 290W power dissipation, and 150°C max operating temperature. Ideal for power control applications due to its fast turn-off time of 201ns and low fall time of 100ns.

Median Price

$3.190

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 439 parts In-Stock

1+ parts

$2.410

100+ parts

$2.360

1k+ parts

$2.310

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439

$2.410

$2.360

$2.310

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Farnell

UK . 3,697 parts In-Stock

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$3.190

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$2.360

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$2.000

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3,697

$3.190

$2.360

$2.000

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Element14

Singapore . 2,223 parts In-Stock

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$6.300

100+ parts

$4.640

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$3.420

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2,223

$6.300

$4.640

$3.420

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Distributors (In-Stock)

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Digiode

USA . 1,933 parts In-Stock

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$2.708

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1,933

$2.708

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Nova Conductors

Japan . 450 parts In-Stock

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$3.352

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450

$3.352

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TME

Poland . 288 parts In-Stock

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$4.540

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$2.820

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288

$4.540

$2.820

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Vyrian

USA . 1,069 parts In-Stock

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1,069

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ComSIT USA

USA . 590 parts In-Stock

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ComSIT Distribution GmbH

Germany . 110 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 20 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,097 parts In-Stock

1+ parts

$1.206

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2,097

$1.206

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Ampacity Inc.

Singapore . 884 parts In-Stock

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$2.420

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884

$2.420

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Corphita

USA . 2,404 parts In-Stock

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$2.565

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2,404

$2.565

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Corohmni

South Africa . 190 parts In-Stock

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$2.850

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190

$2.850

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Aranea Global

USA . 50 parts In-Stock

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$3.285

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$3.154

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50

$3.285

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$3.154

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Continental Prestige Electronics

USA . 6,165 parts In-Stock

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$3.352

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$3.285

6,165

$3.352

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$3.285

Argo Parts USA

USA . 4,341 parts In-Stock

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$3.352

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4,341

$3.352

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Lixinc

USA . 18,135 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,644 parts In-Stock

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TANS Electronics

Latvia . 8,087 parts In-Stock

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Kulean Microsystems

USA . 6,876 parts In-Stock

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Problanco Electronics

Mexico . 6,390 parts In-Stock

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SupplyDigital Components

Austria . 5,401 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,900 parts In-Stock

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Supply Digital

USA . 1,408 parts In-Stock

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A-Z Elektronik GmbH

Germany . 534 parts In-Stock

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534

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Kepictronics

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439

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Assy Fe

Spain . 50 parts In-Stock

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GreenTree Electronics

Israel . 30 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 30 parts In-Stock

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Glotronic Ltd.

UK . 27 parts In-Stock

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Authorized Procurement Solutions

USA . 20 parts In-Stock

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UHIMA Technologies

Türkiye . 14 parts In-Stock

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Eastek

USA . 10 parts In-Stock

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Overview

Enhance your power control applications with the FGH80N60FDTU by Onsemi. As a leader in insulated gate bipolar transistors, Onsemi delivers top-notch quality and reliability. This N-channel transistor boasts a single configuration with a built-in diode, offering maximum power dissipation of 290W. With a quick fall time of 100ns and nominal turn-off time of 201ns, this transistor ensures efficient performance. Perfect for high-power applications, the FGH80N60FDTU provides customers with the value, benefits, and advantages they need to take their projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speed, making them suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and reduces component count, making the product more cost-effective and efficient.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability in controlling power flow.

Maximum Power Dissipation (Abs): 290 W

With a high power dissipation capability, this IGBT can handle large power loads without overheating, suitable for high-power applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the IGBT to operate in harsh environments without compromising performance, increasing its versatility.

Maximum Collector-Emitter Voltage: 600 V

The high collector-emitter voltage rating enables the IGBT to handle high voltage levels safely, making it suitable for various power applications.

Maximum Collector Current (IC): 80 A

Capable of handling high current loads, making it suitable for power control applications that require high current handling capacity.

Nominal Turn On Time (ton): 74 ns

Fast turn-on time ensures quick switching and response, improving overall efficiency and performance of the product.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGH80N60FDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

100 ns

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

201 ns

Nominal Turn On Time (ton):

74 ns

Trade Compliance

FGH80N60FDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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