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FES16HT

Onsemi

FES16HT by Onsemi

The Onsemi FES16HT is a single rectifier diode with a max output current of 16A and a max repetitive peak reverse voltage of 500V. It has a fast recovery time of 0.05us, making it ideal for applications requiring high-speed switching capabilities. With a package style of flange mount and through-hole terminal form, this diode is suitable for use in circuits where efficient power dissipation up to 7.81W is required at temperatures ranging from -65 °C to 150°C.

Median Price

$0.343

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 801 parts In-Stock

1+ parts

-

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$0.343

1k+ parts

$0.285

10k+ parts

$0.254

801

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$0.343

$0.285

$0.254

Distributors (In-Stock)

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Digiode

USA . 265 parts In-Stock

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$0.268

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265

$0.268

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Vyrian

USA . 4,326 parts In-Stock

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Inventory MP

USA . 23 parts In-Stock

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Bristol Electronics

USA . 23 parts In-Stock

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Tech-Mark Corp

USA . 20 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,791 parts In-Stock

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$0.254

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2,791

$0.254

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Corohmni

South Africa . 103 parts In-Stock

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$0.282

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103

$0.282

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Native Components

USA . 477 parts In-Stock

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$44.950

100+ parts

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$43.152

477

$44.950

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$43.152

Northwest PG Solutions

USA . 653 parts In-Stock

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$49.445

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653

$49.445

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,857 parts In-Stock

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Problanco Electronics

Mexico . 7,997 parts In-Stock

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TANS Electronics

Latvia . 5,667 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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SupplyDigital Components

Austria . 1,859 parts In-Stock

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Supply Digital

USA . 1,189 parts In-Stock

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Kulean Microsystems

USA . 282 parts In-Stock

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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Assy Fe

Spain . 26 parts In-Stock

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Overview

Unleash the power of innovation with the FES16HT by Onsemi, a top-quality rectifier diode that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this fast recovery diode is designed for maximum efficiency and precision in a wide range of applications. From automotive electronics to industrial machinery, the FES16HT delivers superior results with its high power dissipation and low reverse recovery time. Experience the value and benefits of choosing Onsemi for your diode needs - trust in excellence, trust in FES16HT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the diode lightweight and durable, suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.05 us

A fast reverse recovery time ensures efficient and quick switching operations.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power loss and improves overall performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures reliability in various environments.

Maximum Power Dissipation: 7.81 W

With a high power dissipation capability, this diode can handle significant power loads.

Maximum Output Current: 16 A

Capable of handling high output currents, making it suitable for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 500 V

High reverse voltage rating allows for versatility in different voltage applications.

Technical Specifications

Diodes & Rectifiers FES16HT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

7.81 W

Maximum Repetitive Peak Reverse Voltage:

500 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

FES16HT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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