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FES16GT

Onsemi

FES16GT by Onsemi

FES16GT by Onsemi is a single rectifier diode with a max output current of 16A and a max repetitive peak reverse voltage of 400V. It has a fast recovery time of 0.05us, making it ideal for applications requiring high-speed switching. With a package style of flange mount and max power dissipation of 7.81W, it can operate in temperatures ranging from -65 °C to 150°C.

Median Price

$0.365

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Freelance Electronics

USA . 2 parts In-Stock

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Vyrian

USA . 40,959 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 3,846 parts In-Stock

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Digiode

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J2 Sourcing AB

Sweden . 1,500 parts In-Stock

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Bristol Electronics

USA . 592 parts In-Stock

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Atlantic Semiconductor

USA . 400 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 357 parts In-Stock

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Dan-Mar Components

USA . 357 parts In-Stock

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ComSIT Distribution GmbH

Germany . 240 parts In-Stock

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R&J Components

USA . 123 parts In-Stock

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EMSNET

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Tech-Mark Corp

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.081

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$0.073

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Corohmni

South Africa . 250 parts In-Stock

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Native Components

USA . 976 parts In-Stock

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$9.601

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Northwest PG Solutions

USA . 433 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

Mexico . 6,861 parts In-Stock

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SupplyDigital Components

Austria . 6,434 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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TANS Electronics

Latvia . 3,883 parts In-Stock

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Assy Fe

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Supply Digital

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Corphita

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UHIMA Technologies

Türkiye . 668 parts In-Stock

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Kepictronics

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Overview

Enhance your electronic devices with the exceptional performance of the FES16GT Diode & Rectifier by Onsemi. Crafted with precision and expertise, this product guarantees top-notch quality and reliability. Ideal for fast recovery applications, it ensures smooth operation and efficiency. Experience the value and benefits of this product as it delivers high power dissipation and maximum output current of 16A, making it a must-have component for your projects. Elevate your electronics with the FES16GT today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the diode, making it reliable for long-term use.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time ensures efficient switching, making this diode suitable for fast recovery applications.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the diode to function in various environmental conditions.

Maximum Power Dissipation: 7.81 W

High power dissipation capability enables the diode to handle larger currents without overheating.

Technical Specifications

Diodes & Rectifiers FES16GT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

7.81 W

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

FES16GT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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