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FES10G

Onsemi

FES10G by Onsemi

FES10G by Onsemi is a single diode with ultra-fast recovery time of 0.04 us and max output current of 10 A. It operates b/w -55 to 175 °C, ideal for applications requiring high-speed rectification like automotive electronics. The package style is small outline with matte tin finish and peak reflow temperature of 260°C.

Median Price

$0.786

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 691 parts In-Stock

1+ parts

$1.620

100+ parts

$0.836

1k+ parts

$0.607

10k+ parts

$0.577

691

$1.620

$0.836

$0.607

$0.577

Rochester

USA . 762,878 parts In-Stock

1+ parts

-

100+ parts

$0.685

1k+ parts

$0.569

10k+ parts

$0.507

762,878

-

$0.685

$0.569

$0.507

DigiKey

USA . 762,878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.860

10k+ parts

-

762,878

-

-

$0.860

-

Verical

USA . 753,783 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.711

10k+ parts

$0.634

753,783

-

-

$0.711

$0.634

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 5,000 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

-

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-

5,000

$0.350

-

-

-

Digiode

USA . 337 parts In-Stock

1+ parts

$0.533

100+ parts

-

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-

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-

337

$0.533

-

-

-

Vyrian

USA . 69 parts In-Stock

1+ parts

$0.561

100+ parts

-

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-

10k+ parts

-

69

$0.561

-

-

-

DigiKey Marketplace

USA . 769,085 parts In-Stock

1+ parts

-

100+ parts

$0.580

1k+ parts

-

10k+ parts

-

769,085

-

$0.580

-

-

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.040

10,000

-

-

-

$1.040

Component Sense

UK . 3,604 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

3,604

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 66 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

$0.236

66

$0.246

-

-

$0.236

Northwest PG Solutions

USA . 1,880 parts In-Stock

1+ parts

$0.271

100+ parts

-

1k+ parts

-

10k+ parts

$0.239

1,880

$0.271

-

-

$0.239

Ampacity Inc.

Singapore . 459,910 parts In-Stock

1+ parts

$0.445

100+ parts

-

1k+ parts

-

10k+ parts

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459,910

$0.445

-

-

-

Corphita

USA . 832 parts In-Stock

1+ parts

$0.505

100+ parts

-

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-

10k+ parts

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832

$0.505

-

-

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Corohmni

South Africa . 363 parts In-Stock

1+ parts

$0.524

100+ parts

-

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363

$0.524

-

-

-

Microchip USA

USA . 8,489 parts In-Stock

1+ parts

$3.520

100+ parts

$3.500

1k+ parts

$3.490

10k+ parts

$3.480

8,489

$3.520

$3.500

$3.490

$3.480

Kepictronics

USA . 65,000 parts In-Stock

1+ parts

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65,000

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Metaverse IC Inc.

Canada . 65,000 parts In-Stock

1+ parts

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65,000

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QUARKTWIN TECHNOLOGY LTD

USA . 18,291 parts In-Stock

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18,291

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SupplyDigital Components

Austria . 4,816 parts In-Stock

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4,816

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Problanco Electronics

Mexico . 4,563 parts In-Stock

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4,563

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Kulean Microsystems

USA . 790 parts In-Stock

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790

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UHIMA Technologies

Türkiye . 662 parts In-Stock

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662

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TANS Electronics

Latvia . 333 parts In-Stock

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333

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Overview

Experience the next level of performance with the FES10G by Onsemi. As a leading manufacturer in the industry, Onsemi brings you a top-of-the-line diode that delivers ultra-fast recovery for a wide range of applications. Whether you're looking to enhance efficiency in power supplies or improve signal integrity in communication systems, the FES10G offers unmatched reliability and precision. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 400V, this rectifier diode is designed to meet your high-demand needs. Trust Onsemi to provide cutting-edge technology that will elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent protection and insulation for the diode, ensuring its durability and reliability.

Maximum Reverse Recovery Time: 0.04 us

Ultra fast reverse recovery time ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable terminal finish for secure connections.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of AC to DC.

Technical Specifications

Diodes & Rectifiers FES10G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JEDEC-95 Code:

TO-277

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.04 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FES10G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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