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FES16JT

Onsemi

FES16JT by Onsemi

FES16JT by Onsemi is a single rectifier diode with a max output current of 16A and a max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.05us, making it suitable for applications requiring high-speed switching capabilities. With a package style of flange mount and through-hole terminal form, this diode is ideal for use in circuits where efficient power management is crucial.

Median Price

$4.900

Lifecycle Status

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Forefront Electronics and Design

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Right Parts Inc.

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First Choice Components Inc.

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Corohmni

South Africa . 138 parts In-Stock

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Component Stockers USA

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Glotronic Ltd.

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Overview

Experience the unparalleled quality and reliability of Onsemi with the FES16JT diode rectifier. This fast recovery diode offers superior performance in a wide range of applications, from power supplies to motor controls. With a maximum output current of 16A and a maximum repetitive peak reverse voltage of 600V, this product delivers exceptional value and efficiency. Trust Onsemi to provide innovative solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material ensures durability and protection for the diode, making it suitable for various operating environments.

Maximum Reverse Recovery Time: 0.05 us

The fast reverse recovery time of 0.05 us allows for efficient switching and high-speed operation, making it suitable for fast recovery applications.

Maximum Reverse Current: 10 uA

Low reverse current of 10 uA indicates minimal leakage, ensuring better efficiency and performance of the diode.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop of 1.5 V helps in reducing power losses and heat dissipation, making the diode energy-efficient.

Maximum Output Current: 16 A

High output current capacity of 16 A allows for handling larger loads, making it suitable for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

High repetitive peak reverse voltage of 600 V ensures reliable performance and protection against voltage spikes, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers FES16JT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

7.81 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

FES16JT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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