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FES16BTR

Onsemi

FES16BTR by Onsemi

FES16BTR by Onsemi is a single rectifier diode with 100V peak reverse voltage and 16A output current. It has a max power dissipation of 7.81W and fast reverse recovery time of 0.035us. Ideal for applications requiring high efficiency and reliability in temperature range from -65 to 150 °C, such as power supplies and automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,364 parts In-Stock

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Digiode

USA . 1,901 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 88 parts In-Stock

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$0.206

100+ parts

-

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$0.198

88

$0.206

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$0.198

Northwest PG Solutions

USA . 548 parts In-Stock

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$0.227

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$0.200

548

$0.227

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$0.200

Component Stockers USA

USA . 502 parts In-Stock

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$99.990

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502

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,625 parts In-Stock

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28,625

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Kulean Microsystems

USA . 8,348 parts In-Stock

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TANS Electronics

Latvia . 4,897 parts In-Stock

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SupplyDigital Components

Austria . 4,607 parts In-Stock

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Problanco Electronics

Mexico . 3,094 parts In-Stock

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Corphita

USA . 1,009 parts In-Stock

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UHIMA Technologies

Türkiye . 253 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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Supply Digital

USA . 134 parts In-Stock

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Overview

Enhance your electronic designs with the FES16BTR by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees quality and reliability in every product. The FES16BTR is a powerful rectifier diode with a maximum output current of 16A, making it ideal for a wide range of applications. From power supplies to battery chargers, this diode offers exceptional performance and efficiency. Upgrade your projects with the FES16BTR and experience the value it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good insulation and protection for the diode, ensuring durability and reliability.

Maximum Reverse Recovery Time: 0.035 us

The low reverse recovery time indicates fast switching capabilities, making this diode suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the diode to function effectively in a wide range of temperature conditions.

Maximum Power Dissipation: 7.81 W

The high power dissipation capability ensures that the diode can handle a significant amount of power without overheating.

Maximum Output Current: 16 A

With a high output current rating, this diode can handle large current loads without any issues.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high reverse voltage rating allows the diode to withstand voltage spikes and transients without failing.

Technical Specifications

Diodes & Rectifiers FES16BTR attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

7.81 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

FES16BTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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