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FES16DT

Onsemi

FES16DT by Onsemi

FES16DT by Onsemi is a single rectifier diode with a max output current of 16A and a max reverse recovery time of 0.035us. It is designed for fast recovery applications, with a max operating temperature of 150 °C. The diode has a package style of flange mount and can handle up to 200V in repetitive peak reverse voltage.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,598 parts In-Stock

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$0.440

100+ parts

$0.430

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$0.420

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15,598

$0.440

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Digiode

USA . 505 parts In-Stock

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$0.418

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$0.418

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Vyrian

USA . 54,988 parts In-Stock

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$0.440

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$0.770

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$0.580

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$0.500

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5

$0.770

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Q Components

USA . 17,746 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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ACDS - Activité Composants Distribution Service

France . 659 parts In-Stock

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Speed Components Ltd

Israel . 647 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 451 parts In-Stock

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PUI

USA . 355 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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ECAB

Sweden . 246 parts In-Stock

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Bristol Electronics

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R&J Components

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Inventory MP

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Prism Electronics

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Zilex Electronics Inc.

Canada . 41 parts In-Stock

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Inland Empire Components Inc.

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Elcom Components

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Century Electronics Ltd.

USA . 5 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Native Components

USA . 39 parts In-Stock

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$0.110

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$0.106

39

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Northwest PG Solutions

USA . 927 parts In-Stock

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$0.121

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927

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Corphita

USA . 917 parts In-Stock

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$0.396

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Corohmni

South Africa . 366 parts In-Stock

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Component Stockers USA

USA . 574 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 6,280 parts In-Stock

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TANS Electronics

Latvia . 5,645 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,286 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 3,255 parts In-Stock

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Supply Digital

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Problanco Electronics

Mexico . 2,020 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 659 parts In-Stock

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659

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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Glotronic Ltd.

UK . 527 parts In-Stock

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Assy Fe

Spain . 233 parts In-Stock

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Overview

Unleash the power of fast recovery with the FES16DT by Onsemi. This high-quality diode offers reliable performance and efficiency, making it perfect for a wide range of applications. With a maximum output current of 16A and a maximum reverse recovery time of 0.035 us, this rectifier diode ensures smooth operation and optimal functionality. Trust in Onsemi's reputation for excellence and experience the benefits of the FES16DT in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation and protection for the diode, making it durable and reliable.

Maximum Reverse Recovery Time: 0.035 us

The fast reverse recovery time ensures efficient switching and performance of the diode, making it suitable for fast recovery applications.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal power loss and leakage, enhancing the overall efficiency of the diode.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the diode to withstand various environmental conditions, providing reliable performance in a wide range of applications.

Maximum Power Dissipation: 7.81 W

The high power dissipation capability allows the diode to handle high power loads without overheating, ensuring long-term reliability.

Technical Specifications

Diodes & Rectifiers FES16DT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

7.81 W

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

FES16DT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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