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FES16BT

Onsemi

FES16BT by Onsemi

FES16BT by Onsemi is a fast recovery rectifier diode with 100V peak reverse voltage and 16A output current. It has a max forward voltage of 0.95V and operates b/w -65 to 150 °C. Ideal for applications requiring high power dissipation, such as flange mount setups.

Median Price

$0.912

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 10 parts In-Stock

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$0.224

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$0.204

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$0.184

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10

$0.224

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$0.184

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Rochester

USA . 101 parts In-Stock

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-

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$1.600

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$1.430

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$1.340

101

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$1.600

$1.430

$1.340

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Digiode

USA . 2,454 parts In-Stock

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$0.213

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Vyrian

USA . 4,423 parts In-Stock

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Pegasus Components GmbH

Germany . 1,876 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,349 parts In-Stock

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PC Components Company LLC

USA . 1,075 parts In-Stock

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Bristol Electronics

USA . 1,075 parts In-Stock

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R&J Components

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Mentor Electronics Marketing, LLC

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Fibra_Brandt Electronic GMBH

Germany . 123 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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Electronics Depot

USA . 85 parts In-Stock

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Resion

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Corohmni

South Africa . 107 parts In-Stock

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$0.157

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$0.157

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Corphita

USA . 1,481 parts In-Stock

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$0.202

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$0.224

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$0.204

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$0.184

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$0.224

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Native Components

USA . 592 parts In-Stock

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$31.690

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$30.422

592

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$30.422

Northwest PG Solutions

USA . 1,527 parts In-Stock

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$34.859

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 7,300 parts In-Stock

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TANS Electronics

Latvia . 7,144 parts In-Stock

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SupplyDigital Components

Austria . 5,390 parts In-Stock

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Kulean Microsystems

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Supply Digital

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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UHIMA Technologies

Türkiye . 98 parts In-Stock

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Glotronic Ltd.

UK . 80 parts In-Stock

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Overview

Discover the power and efficiency of the FES16BT diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. The FES16BT is perfect for fast recovery applications, providing reliable performance and durability. With a maximum output current of 16A and a maximum reverse recovery time of 0.035us, this diode offers exceptional value and benefits to customers looking for high-performance solutions. Trust Onsemi to deliver excellence with the FES16BT diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material offers good durability and protection for the diode.

Maximum Reverse Recovery Time: 0.035 us

The fast reverse recovery time ensures efficient performance and helps in quick switching applications.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for easy and secure mounting in various electronic circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance makes it suitable for use in diverse environmental conditions.

Maximum Power Dissipation: 7.81 W

The high power dissipation capability ensures the diode can handle large amounts of power without damage.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop helps in reducing energy losses and improves overall efficiency of the diode.

Maximum Output Current: 16 A

High output current capacity allows the diode to handle large currents without breakdown.

Maximum Repetitive Peak Reverse Voltage: 100 V

High peak reverse voltage rating makes the diode suitable for high voltage applications.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and stable performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers FES16BT attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

7.81 W

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

FES16BT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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