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FDS86267P

Onsemi

FDS86267P by Onsemi

FDS86267P by Onsemi is a P-CHANNEL FET with 150V DS breakdown voltage, ideal for SWITCHING applications. It features a max ID of 2.2A and 0.255 ohm RDS(on), operating in the -55 to 150 °C temperature range. This SMALL OUTLINE transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$1.410

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,400 parts In-Stock

1+ parts

$1.820

100+ parts

$0.785

1k+ parts

$0.599

10k+ parts

$0.565

1,400

$1.820

$0.785

$0.599

$0.565

Mouser Electronics

USA . 593 parts In-Stock

1+ parts

$2.470

100+ parts

$0.969

1k+ parts

$0.817

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-

593

$2.470

$0.969

$0.817

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DigiKey

USA . 407 parts In-Stock

1+ parts

$2.470

100+ parts

$1.078

1k+ parts

$0.792

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407

$2.470

$1.078

$0.792

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Newark

USA . 4,051 parts In-Stock

1+ parts

$2.510

100+ parts

$1.110

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$0.946

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4,051

$2.510

$1.110

$0.946

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Farnell

UK . 4,411 parts In-Stock

1+ parts

-

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$0.834

1k+ parts

$0.606

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4,411

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$0.834

$0.606

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Element14

Singapore . 4,411 parts In-Stock

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$1.410

1k+ parts

$1.020

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4,411

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$1.410

$1.020

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Arrow

USA . 2,500 parts In-Stock

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$0.707

2,500

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$0.707

Verical

USA . 1,600 parts In-Stock

1+ parts

-

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$0.942

1k+ parts

$0.832

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1,600

-

$0.942

$0.832

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Master Electronics

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

$0.801

1k+ parts

$0.707

10k+ parts

$0.627

1,600

-

$0.801

$0.707

$0.627

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 961 parts In-Stock

1+ parts

$0.564

100+ parts

-

1k+ parts

-

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961

$0.564

-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.813

100+ parts

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500

$0.813

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Chip Stock

USA . 59,000 parts In-Stock

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Vyrian

USA . 6,647 parts In-Stock

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6,647

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IBS Electronics

USA . 2,600 parts In-Stock

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$1.731

1k+ parts

$0.965

10k+ parts

$0.825

2,600

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$1.731

$0.965

$0.825

Component Sense

UK . 2,500 parts In-Stock

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2,500

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Maverick Electronics, Inc.

USA . 2,500 parts In-Stock

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2,500

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Sensible Micro Corp

USA . 1,498 parts In-Stock

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1,498

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Flip Electronics

USA . 1,236 parts In-Stock

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1,236

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Bristol Electronics

USA . 1,140 parts In-Stock

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1,140

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LWI Electronics Inc

India . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

1+ parts

$0.334

100+ parts

-

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1,000

$0.334

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Ampacity Inc.

Singapore . 6,903 parts In-Stock

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$0.500

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6,903

$0.500

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Semicontronic

India . 6,559 parts In-Stock

1+ parts

$0.500

100+ parts

$0.488

1k+ parts

$0.485

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6,559

$0.500

$0.488

$0.485

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Corphita

USA . 2,185 parts In-Stock

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$0.535

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$0.535

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Corohmni

South Africa . 202 parts In-Stock

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$0.574

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202

$0.574

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Argo Parts USA

USA . 3,289 parts In-Stock

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$0.813

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3,289

$0.813

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.813

100+ parts

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1k+ parts

$0.772

10k+ parts

$0.756

1,000

$0.813

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$0.772

$0.756

Component Stockers USA

USA . 16,106 parts In-Stock

1+ parts

$1.560

100+ parts

$1.010

1k+ parts

$0.700

10k+ parts

$0.590

16,106

$1.560

$1.010

$0.700

$0.590

Microchip USA

USA . 4,611 parts In-Stock

1+ parts

$4.695

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4,611

$4.695

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RC Electronics

USA . 52,291 parts In-Stock

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$0.830

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$0.760

10k+ parts

$0.730

52,291

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$0.830

$0.760

$0.730

Perfect Parts

USA . 33,624 parts In-Stock

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33,624

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Kepictronics

USA . 32,500 parts In-Stock

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Problanco Electronics

Mexico . 7,465 parts In-Stock

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Kulean Microsystems

USA . 5,905 parts In-Stock

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TANS Electronics

Latvia . 5,725 parts In-Stock

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Lixinc

USA . 5,171 parts In-Stock

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Continental Prestige Electronics

USA . 3,619 parts In-Stock

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$0.945

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$0.627

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3,619

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$0.945

$0.627

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S.R.D Solutions

India . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,653 parts In-Stock

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Futuretech Components

Singapore . 2,000 parts In-Stock

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Supply Digital

USA . 965 parts In-Stock

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965

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UHIMA Technologies

Türkiye . 119 parts In-Stock

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119

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Unlock the power of efficient switching with the FDS86267P by Onsemi. Crafted with precision and expertise, this P-Channel FET delivers top-notch performance in a variety of applications. From enhancing your circuitry to optimizing your electronics, this transistor is your go-to solution. With a maximum drain current of 2.2A and low on-resistance, this device offers unmatched reliability and durability. Trust Onsemi to provide you with quality components that elevate your projects to the next level. Choose the FDS86267P for superior performance and seamless integration.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Suitable for specific circuit configurations and applications where P-channel transistors are required.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient for applications that require a built-in diode functionality, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for efficient switching applications, offering high performance and reliability in such scenarios.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, facilitating streamlined assembly processes.

Minimum DS Breakdown Voltage: 150 V

With a high breakdown voltage, the transistor can withstand higher levels of voltage, making it suitable for various power applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easier integration into circuit designs and compact layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are well-suited for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer precise control and performance in switching applications, ensuring efficient operation.

No. of Terminals: 8

Provides multiple connection points for versatile circuit configurations and compatibility.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced MOSFET technology for improved performance, efficiency, and reliability.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without compromising performance, suitable for demanding environments.

Transistor Element Material: SILICON

Silicon-based material ensures stable and consistent transistor characteristics for reliable operation.

Minimum Operating Temperature: -55 °C

Can withstand extreme low temperatures, making it suitable for a wide range of operating environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Offers corrosion resistance and optimal electrical conductivity for reliable connections and long-term performance.

Maximum Drain Current (ID): 2.2 A

Capable of handling high current loads, making it suitable for power applications that require efficient current flow.

Maximum Drain-Source On Resistance: 0.255 ohm

Low on-resistance ensures minimal power loss and efficient operation, ideal for high-performance applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and compatibility with various system layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration, ensuring proper soldering and reliability in assembly processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during soldering processes, ensuring secure and durable connections.

Maximum Feedback Capacitance (Crss): 2.3 pF

Low feedback capacitance minimizes signal distortion and interference, enhancing overall performance in signal processing applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS86267P attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.255 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.3 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS86267P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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