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FDS86141

Onsemi

FDS86141 by Onsemi

FDS86141 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage and 7A drain current. It is used for switching applications, operates in enhancement mode, and has a built-in diode. The transistor comes in a small outline package with GULL WING terminals, suitable for surface mount assembly at temperatures up to 150°C.

Median Price

$1.270

Lifecycle Status

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21

In-Stock Inventory

1k+

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Chip1Stop

Japan . 1,709 parts In-Stock

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$0.975

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$0.843

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$0.975

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Arrow

USA . 9,000 parts In-Stock

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$0.978

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$0.874

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$0.978

$0.874

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Newark

USA . 2,860 parts In-Stock

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$2.390

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$1.720

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$2.390

$1.720

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Mouser Electronics

USA . 21,734 parts In-Stock

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$2.570

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$1.370

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$1.080

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21,734

$2.570

$1.370

$1.080

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DigiKey

USA . 5,011 parts In-Stock

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$3.040

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$1.366

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$1.143

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$0.934

5,011

$3.040

$1.366

$1.143

$0.934

Flip Electronics (Authorized)

USA . 22,500 parts In-Stock

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Verical

USA . 9,000 parts In-Stock

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Rochester

USA . 2,850 parts In-Stock

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$1.270

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$1.050

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$0.940

2,850

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$1.270

$1.050

$0.940

RS (Exports)

UK . 1,634 parts In-Stock

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$1.194

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$1.020

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1,634

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Farnell

UK . 360 parts In-Stock

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$1.160

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$0.882

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360

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$0.882

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Element14

Singapore . 360 parts In-Stock

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$1.990

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$1.350

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$1.330

360

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$1.990

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$1.330

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Digiode

USA . 3,283 parts In-Stock

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$0.988

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Flip Electronics

USA . 22,500 parts In-Stock

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Chip Stock

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Vyrian

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Component Sense

UK . 2,136 parts In-Stock

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Bristol Electronics

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Inventory MP

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Tectiva GmbH

Germany . 150 parts In-Stock

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150

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ECAB

Sweden . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,238 parts In-Stock

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$0.760

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$0.760

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Corohmni

South Africa . 156 parts In-Stock

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$0.890

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Corphita

USA . 2,311 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,322 parts In-Stock

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$1.846

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Perfect Parts

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Lixinc

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Authorized Procurement Solutions

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Microchip USA

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SupplyDigital Components

Austria . 8,018 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Continental Prestige Electronics

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Argo Parts USA

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Problanco Electronics

Mexico . 2,170 parts In-Stock

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Aranea Global

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Kepictronics

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UHIMA Technologies

Türkiye . 166 parts In-Stock

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Supply Digital

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Overview

Enhance your electronic devices with the reliable and high-quality FDS86141 Small Signal Field Effect Transistor by Onsemi. Known for their superior manufacturing standards, Onsemi delivers top-notch components for various applications like switching. With a maximum drain current of 7 A and a low drain-source on resistance of 0.023 ohm, this N-channel transistor offers exceptional performance and efficiency. Upgrade your projects with the FDS86141 and experience the value and benefits of using premium components from a trusted manufacturer like Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the internal components, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching capabilities and allows for high performance in various applications.

Minimum DS Breakdown Voltage: 100 V

Can handle high voltages, making it suitable for a wide range of electrical circuits and devices.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the functionality and versatility of the transistor for different circuit designs.

Maximum Power Dissipation (Abs): 5 W

Can handle moderate power levels without overheating, ensuring reliable operation under varying conditions.

Maximum Drain Current (Abs) (ID): 7 A

Capable of handling high current loads, making it suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.023 ohm

Low on-resistance leads to high efficiency and minimal power loss during operation.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation, ensuring reliability in challenging conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS86141 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

13 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

5 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS86141 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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