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FDS86240

Onsemi

FDS86240 by Onsemi

FDS86240 by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 7.5A and an On Resistance of 0.0198 ohm. With a small outline package style and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.

Median Price

$2.480

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 5,000 parts In-Stock

1+ parts

$2.000

100+ parts

$1.140

1k+ parts

$1.070

10k+ parts

-

5,000

$2.000

$1.140

$1.070

-

Newark

USA . 2,461 parts In-Stock

1+ parts

$3.710

100+ parts

$1.680

1k+ parts

$1.550

10k+ parts

-

2,461

$3.710

$1.680

$1.550

-

DigiKey

USA . 13,486 parts In-Stock

1+ parts

$3.870

100+ parts

$1.779

1k+ parts

$1.584

10k+ parts

$1.294

13,486

$3.870

$1.779

$1.584

$1.294

Mouser Electronics

USA . 6,110 parts In-Stock

1+ parts

$3.870

100+ parts

$1.730

1k+ parts

$1.510

10k+ parts

$1.480

6,110

$3.870

$1.730

$1.510

$1.480

Element14

Singapore . 5,000 parts In-Stock

1+ parts

$3.960

100+ parts

$2.550

1k+ parts

$2.060

10k+ parts

-

5,000

$3.960

$2.550

$2.060

-

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.271

2,500

-

-

-

$1.271

Future Electronics

Canada . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$2.960

2,500

-

-

-

$2.960

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.397

2,500

-

-

-

$1.397

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.410

2,500

-

-

-

$1.410

Master Electronics

USA . 2,250 parts In-Stock

1+ parts

-

100+ parts

$1.670

1k+ parts

$1.470

10k+ parts

$1.260

2,250

-

$1.670

$1.470

$1.260

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 715 parts In-Stock

1+ parts

$1.900

100+ parts

-

1k+ parts

-

10k+ parts

-

715

$1.900

-

-

-

Nova Conductors

Japan . 93 parts In-Stock

1+ parts

$2.052

100+ parts

-

1k+ parts

-

10k+ parts

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93

$2.052

-

-

-

Velocity Electronics

USA . 17,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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17,500

-

-

-

-

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.920

10,000

-

-

-

$5.920

Chip Stock

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,000

-

-

-

-

IBS Electronics

USA . 7,250 parts In-Stock

1+ parts

-

100+ parts

$2.342

1k+ parts

$2.062

10k+ parts

$1.767

7,250

-

$2.342

$2.062

$1.767

Vyrian

USA . 5,823 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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5,823

-

-

-

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Flip Electronics

USA . 5,293 parts In-Stock

1+ parts

-

100+ parts

-

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5,293

-

-

-

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ACDS - Activité Composants Distribution Service

France . 524 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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524

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,782 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

5,782

$1.050

-

-

-

Semicontronic

India . 5,446 parts In-Stock

1+ parts

$1.080

100+ parts

$1.053

1k+ parts

$1.048

10k+ parts

-

5,446

$1.080

$1.053

$1.048

-

Corohmni

South Africa . 262 parts In-Stock

1+ parts

$1.250

100+ parts

-

1k+ parts

-

10k+ parts

-

262

$1.250

-

-

-

Aztec Data Supply Inc.

USA . 4,309 parts In-Stock

1+ parts

$1.497

100+ parts

-

1k+ parts

-

10k+ parts

-

4,309

$1.497

-

-

-

Corphita

USA . 2,378 parts In-Stock

1+ parts

$1.800

100+ parts

-

1k+ parts

-

10k+ parts

-

2,378

$1.800

-

-

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Argo Parts USA

USA . 2,844 parts In-Stock

1+ parts

$2.052

100+ parts

-

1k+ parts

-

10k+ parts

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2,844

$2.052

-

-

-

Continental Prestige Electronics

USA . 335 parts In-Stock

1+ parts

$2.052

100+ parts

-

1k+ parts

-

10k+ parts

$2.011

335

$2.052

-

-

$2.011

Netroflash

USA . 100 parts In-Stock

1+ parts

$2.052

100+ parts

$2.011

1k+ parts

-

10k+ parts

-

100

$2.052

$2.011

-

-

Component Stockers USA

USA . 3,737 parts In-Stock

1+ parts

$2.320

100+ parts

$2.200

1k+ parts

$2.130

10k+ parts

-

3,737

$2.320

$2.200

$2.130

-

iodParts Technologies Inc.

India . 79,999 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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79,999

-

-

-

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Perfect Parts

USA . 48,652 parts In-Stock

1+ parts

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100+ parts

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48,652

-

-

-

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Lixinc

USA . 17,794 parts In-Stock

1+ parts

-

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17,794

-

-

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Problanco Electronics

Mexico . 6,375 parts In-Stock

1+ parts

-

100+ parts

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6,375

-

-

-

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Computer Components Inc. - USA

USA . 2,352 parts In-Stock

1+ parts

-

100+ parts

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2,352

-

-

-

-

Kulean Microsystems

USA . 2,339 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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2,339

-

-

-

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Alle Elektronik GmbH

Germany . 1,895 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,895

-

-

-

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Supply Digital

USA . 1,721 parts In-Stock

1+ parts

-

100+ parts

-

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1,721

-

-

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TANS Electronics

Latvia . 1,696 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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1,696

-

-

-

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UHIMA Technologies

Türkiye . 918 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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918

-

-

-

-

SupplyDigital Components

Austria . 896 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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896

-

-

-

-

Overview

Elevate your electronic projects with the FDS86240 from Onsemi, a top-quality Small Signal Field Effect Transistor (FET) designed for switching applications. Manufactured by Onsemi, known for their cutting-edge technology and reliability, this N-CHANNEL transistor offers enhanced performance and efficiency. With a built-in diode and a maximum drain current of 7.5 A, this transistor is perfect for various applications. Trust in the FDS86240 to deliver superior results and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Offers high efficiency and fast switching speed, making it suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by combining two components into one.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, reducing production time and cost.

Minimum DS Breakdown Voltage: 150 V

Provides a high breakdown voltage, allowing for reliable operation in demanding conditions.

Package Shape: RECTANGULAR

Enables a compact and space-saving form factor, ideal for modern electronic devices.

Terminal Form: GULL WING

Offers easy soldering and secure mechanical connections during assembly.

Operating Mode: ENHANCEMENT MODE

Allows for enhanced performance and control over the transistor's operation.

Maximum Drain Current (Abs) (ID): 7.5 A

Supports high current applications, ensuring reliable operation under heavy loads.

No. of Terminals: 8

Provides flexibility in circuit connections and compatibility with various PCB layouts.

Maximum Power Dissipation (Abs): 5 W

Ensures efficient power handling capabilities, preventing overheating and damage to the transistor.

Package Style (Meter): SMALL OUTLINE

Offers a compact and lightweight design, suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and reliability, commonly used in modern electronic devices.

Maximum Operating Temperature: 150 °C

Withstands high temperature environments, ensuring stable performance in varying conditions.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability, making it a popular choice for transistors.

Minimum Operating Temperature: -55 °C

Operates effectively in low temperature environments, suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Provides corrosion resistance and excellent solderability for reliable connections.

Maximum Drain-Source On Resistance: 0.0198 ohm

Offers low resistance for efficient power management and reduced heat dissipation.

Terminal Position: DUAL

Enables flexible mounting and circuit configurations, enhancing compatibility with different PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow processes during assembly, preventing damage to the transistor.

Peak Reflow Temperature °C: 260

Supports high-temperature soldering processes, ensuring reliable connections during PCB assembly.

Maximum Feedback Capacitance (Crss): 15 pF

Provides low feedback capacitance, improving high-frequency performance and stability.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS86240 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

7.5 A

Maximum Drain Current (ID):

7.5 A

Maximum Drain-Source On Resistance:

.0198 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

5 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS86240 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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