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FDMC3020DC

Onsemi

FDMC3020DC by Onsemi

FDMC3020DC by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.00625 ohm RDS(on), and 50W Pd max. Suitable for surface mount with 5 terminals in a small outline package style.

Median Price

$1.270

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 31,000 parts In-Stock

1+ parts

$0.423

100+ parts

$0.329

1k+ parts

$0.268

10k+ parts

$0.261

31,000

$0.423

$0.329

$0.268

$0.261

Rochester

USA . 126,834 parts In-Stock

1+ parts

-

100+ parts

$1.270

1k+ parts

$1.050

10k+ parts

$0.940

126,834

-

$1.270

$1.050

$0.940

Verical

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.375

10k+ parts

$1.230

72,000

-

-

$1.375

$1.230

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

-

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6,000

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Distributors (In-Stock)

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Digiode

USA . 2,082 parts In-Stock

1+ parts

$0.402

100+ parts

-

1k+ parts

-

10k+ parts

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2,082

$0.402

-

-

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Vyrian

USA . 659 parts In-Stock

1+ parts

$0.423

100+ parts

-

1k+ parts

-

10k+ parts

-

659

$0.423

-

-

-

Bristol Electronics

USA . 5,964 parts In-Stock

1+ parts

$1.688

100+ parts

$0.624

1k+ parts

$0.439

10k+ parts

-

5,964

$1.688

$0.624

$0.439

-

Dan-Mar Components

USA . 5,964 parts In-Stock

1+ parts

-

100+ parts

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5,964

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-

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SPM Sales

USA . 5,300 parts In-Stock

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5,300

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Flip Electronics

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Semi Source

USA . 3,000 parts In-Stock

1+ parts

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3,000

-

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 85 parts In-Stock

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85

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Distributors (Availability)

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Corphita

USA . 2,316 parts In-Stock

1+ parts

$0.381

100+ parts

-

1k+ parts

-

10k+ parts

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2,316

$0.381

-

-

-

Continental Prestige Electronics

USA . 129,134 parts In-Stock

1+ parts

$0.423

100+ parts

$0.329

1k+ parts

$0.268

10k+ parts

-

129,134

$0.423

$0.329

$0.268

-

Corohmni

South Africa . 130 parts In-Stock

1+ parts

$0.423

100+ parts

-

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130

$0.423

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,708 parts In-Stock

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25,708

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Perfect Parts

USA . 25,145 parts In-Stock

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25,145

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Kulean Microsystems

USA . 8,138 parts In-Stock

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8,138

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A-Z Elektronik GmbH

Germany . 5,609 parts In-Stock

1+ parts

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5,609

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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TANS Electronics

Latvia . 1,207 parts In-Stock

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1,207

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SupplyDigital Components

Austria . 895 parts In-Stock

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895

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Problanco Electronics

Mexico . 757 parts In-Stock

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757

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UHIMA Technologies

Türkiye . 616 parts In-Stock

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616

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Supply Digital

USA . 614 parts In-Stock

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614

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Northwest PG Solutions

USA . 597 parts In-Stock

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597

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Native Components

USA . 466 parts In-Stock

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466

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Overview

Unleash the power of cutting-edge technology with the FDMC3020DC by Onsemi! Crafted with precision using high-quality materials, this N-CHANNEL Power Field Effect Transistor offers unmatched performance and reliability for all your switching needs. With a maximum drain current of 17A and a low on-resistance of 0.00625 ohm, this transistor delivers outstanding efficiency and power handling capabilities. Whether you're designing consumer electronics, automotive applications, or industrial equipment, the FDMC3020DC is the perfect choice for maximizing performance and minimizing power losses. Upgrade your projects today with Onsemi's FET technology and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-state resistance and higher efficiency, making them a good choice for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse voltage, making the product more versatile and reliable.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET is optimized for fast and efficient operation.

Surface Mount: YES

Surface-mount technology allows for compact and space-saving designs, making this FET suitable for modern electronic devices.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage ensures reliable performance and protection against voltage spikes in the circuit.

Maximum Pulsed Drain Current (IDM): 100 A

The high pulsed drain current rating makes the FET capable of handling short-duration high-current loads, suitable for power-hungry applications.

Maximum Power Dissipation (Abs): 50 W

With a high power dissipation rating, this FET can efficiently handle power dissipation and heat generated during operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the FET to function reliably in high-temperature environments without thermal shutdown.

Maximum Drain-Source On Resistance: 0.00625 ohm

The low on-resistance minimizes power loss and improves efficiency in the circuit, making this FET suitable for high-current applications.

Technical Specifications

Power Field Effect Transistors (FET) FDMC3020DC attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

60 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

17 A

Maximum Drain-Source On Resistance:

.00625 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MO-240BA

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDMC3020DC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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