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CS-4101N20

Onsemi

CS-4101N20 by Onsemi

CS-4101N20 by Onsemi is an Automotive IC with 20 terminals in a rectangular package. It operates b/w -40 to 105 °C, with power supplies of 8.5/16V. Ideal for industrial applications requiring a max supply current of 125mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 691 parts In-Stock

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Vyrian

USA . 350 parts In-Stock

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SupplyDigital Components

Austria . 7,727 parts In-Stock

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Problanco Electronics

Mexico . 2,966 parts In-Stock

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Kulean Microsystems

USA . 1,851 parts In-Stock

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Corphita

USA . 1,767 parts In-Stock

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TANS Electronics

Latvia . 1,033 parts In-Stock

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UHIMA Technologies

Türkiye . 669 parts In-Stock

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Native Components

USA . 622 parts In-Stock

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Corohmni

South Africa . 229 parts In-Stock

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Northwest PG Solutions

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Overview

Upgrade your automotive systems with the CS-4101N20 by Onsemi. Designed with top-quality materials and advanced technology, this IC offers reliability and efficiency for a wide range of applications. From engine control modules to lighting systems, this product provides seamless integration and optimal performance. Trust in Onsemi's reputation for excellence and choose the CS-4101N20 for unparalleled value and benefits. Experience increased functionality, enhanced durability, and superior results with this innovative solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for automotive applications where weight and durability are important factors.

Power Supplies (V): 8.5/16

The wide range of power supply voltages (8.5V to 16V) allows flexibility in different automotive systems, ensuring compatibility and adaptability to various voltage requirements.

No. of Terminals: 20

Having 20 terminals provides ample connectivity options, allowing for versatile integration and connectivity with other automotive components or systems.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105 °C, this product can withstand harsh environmental conditions in automotive applications, ensuring reliability and longevity.

Technology: BIPOLAR

Utilizing bipolar technology offers high speed and precision performance, making this product suitable for automotive ICs that require efficient and accurate operation.

Technical Specifications

Automotive ICs CS-4101N20 attributes and parameters. Explore more Automotive ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDIP-T20

JESD-609 Code:

e0

No. of Terminals:

20

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

8.5/16

Qualification:

Not Qualified

Sub-Category:

Automotive Circuits

Maximum Supply Current (Isup):

125 mA

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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